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5962-01-430-5507
Memory Microcircuit
5962014305507 014305507 90312-3
A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE. View more Memory Microcircuit
May 2023
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Restrictions 5962-01-430-5507
5962-01-430-5507 is a Memory Microcircuit that does not have a nuclear hardened feature, but does have another critical feature or features such as tolerance, fit restriction or application. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal. This item is sensitive to Electrostatic Discharge.
Import and Export 5962-01-430-5507
- Schedule B
- Subscribe to View Schedule B
- HTS Code
- Subscribe to View HTS Code
End Users 5962-01-430-5507
- Taiwan, Province of China (YE01)
- Effective Date:
- 1 Feb 2015
Approved Sources 5962-01-430-5507
- Part Number
- Manufacturer
- Status
- 90312-3
- Manufacturer
- 73030 - Hamilton Sundstrand Corporation (Active)
- Primary Buy
- Primary Buy
- 90312-3
- 07148 - United Technologies Corp Hamilton (Active)
- Canceled/Obsolete
- Canceled/Obsolete
Datasheet 5962-01-430-5507
- Characteristic
- Specifications
- FIIG
- Specifications
- A458A0
- End Item Identification [AGAV]
- Pacer Dawn
- Body Height [ADAU]
- 0.200 Inches Maximum
- Body Length [ADAQ]
- 1.060 Inches Maximum
- Body Width [ADAT]
- 0.310 Inches Maximum
- Case Outline Source And Designator [CTFT]
- D-8 Mil-M-38510
- Criticality Code Justification [CRTL]
- Cbbl
- Features Provided [CBBL]
- Electrostatic Sensitive And Tested To Mil-Std-883 And Programmed And Burn In, Mil-Std-883, Class B And Erasable
- Maximum Power Dissipation Rating [AEHX]
- 303.0 Milliwatts
- Memory Device Type [CZER]
- Pal
- Operating Temp Range [AFGA]
- -55.0/+125.0 Deg Celsius
- Output Logic Form [CQWX]
- Bipolar Metal-Oxide Semiconductor
- Inclosure Configuration [CQSZ]
- Dual-In-Line
- Inclosure Material [CQSJ]
- Silicon
- Part Name Assigned By Controlling Agency [CXCY]
- Mckt,Digital Bipolar,Programmablearray Logic
- Special Features [FEAT]
- Altered Item Programmed Using 67268/5962-8851501Rx Using Version Or Firmware Description Document Vdd0236.02..01
- Voltage Rating And Type Per Characteristic [CZEN]
- 4.5 Volts Minimum Power Source And 5.5 Volts Maximum Power Source
- Storage Temp Range [AFJQ]
- -65.0/+150.0 Deg Celsius
- Terminal Type And Quantity [TTQY]
- 20 Flat Leads
- Test Data Document [TEST]
- 96906-Mil-Std-883 Standard (Includes Industry Or Association Standards, Individual Manufactureer Standards, Etc.).
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Freight Information 5962-01-430-5507
5962-01-430-5507 has freight characteristics managed by the Department of Energy (DOE).. 5962-01-430-5507 has a variance between NMFC and UFC when transported by rail and the description should be consulted.