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5961-01-653-2159
Transistor
5961016532159 016532159 IRGB4062DPBF
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Transistor
January 2023
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5961-01-653-2159 RQST NE Related Documents 5961-01-653-2159 1+ Documents ( More... ) https//www.nsnlookup.com
Restrictions 5961-01-653-2159
5961-01-653-2159 is a Transistor that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. Demilitarization of this item has been confirmed and is not currently subject to changes. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal.
Import and Export 5961-01-653-2159
- Schedule B
- Subscribe to View Schedule B
- HTS Code
- Subscribe to View HTS Code
End Users 5961-01-653-2159
- MOE Rule:
- B481
- Effective Date:
- 1 Mar 2016
Approved Sources 5961-01-653-2159
- Part Number
- Manufacturer
- Status
- IRGB4062DPBF
- Manufacturer
- 81483 - Infineon Technologies Americas Corp (Active)
- Primary Buy
- Primary Buy
Datasheet 5961-01-653-2159
- Characteristic
- Specifications
- FIIG
- Specifications
- A110A0
- Function For Which Designed [AFZC]
- Rectifier
- Maximum Operating Temp Per Measurement Point [CTSG]
- 175.0 Deg Celsius Junction
- End Item Identification [AGAV]
- Remote Monitoring And Logging System (Rmls)
- Power Rating Per Characteristic [CTRD]
- 125.0 Watts Minimum Total Power Dissipation And 250.0 Watts Maximum Total Power Dissipation
- Overall Height [ABKW]
- 1.210 Inches Maximum
- Overall Length [ABHP]
- 0.420 Inches Maximum
- Overall Width [ABMK]
- 0.190 Inches Maximum
- Special Features [FEAT]
- Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Not Recommended For Surface Mount Application.
- Voltage Rating In Volts Per Characteristic [CTQN]
- 600.0 Maximum Collector To Emitter Voltage, Dc
- Terminal Length [ABJT]
- 0.580 Inches Maximum
Management Data 5961-01-653-2159
- Effective Date
- Organization
- Unit of Issue
- Unit Price
- Qty Unit Pack
- Unit of Issue
- Dec 2018
- Federal Aviation Administration (GE)
- EA
- Subscribe
- 1
- EA
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Freight Information 5961-01-653-2159
5961-01-653-2159 has freight characteristics.. 5961-01-653-2159 has a variance between NMFC and UFC when transported by rail and the description should be consulted.