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5961-01-613-2003
Thyristor Semiconductor Device
5961016132003 016132003 IRFR120N
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Thyristor Semiconductor Device
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Restrictions 5961-01-613-2003
5961-01-613-2003 is a Thyristor Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. Demilitarization of this item has been confirmed and is not currently subject to changes. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal.
Import and Export 5961-01-613-2003
- Schedule B
- Subscribe to View Schedule B
- HTS Code
- Subscribe to View HTS Code
End Users 5961-01-613-2003
- Republic of Korea (ZH01)
- Effective Date:
- 1 Nov 2012
Approved Sources 5961-01-613-2003
- Part Number
- Manufacturer
- Status
- IRFR120N
- Manufacturer
- 81483 - Infineon Technologies Americas Corp (Active)
- Primary Buy
- Primary Buy
Datasheet 5961-01-613-2003
- Characteristic
- Specifications
- FIIG
- Specifications
- A110A0
- Current Rating Per Characteristic [CTQX]
- 9.4 Amperes Nominal Source Current
- Mounting Method [AXGY]
- Terminal
- Semiconductor Material [CTMZ]
- Silicon
- Inclosure Material [ABBH]
- Plastic
- Internal Configuration [ALAS]
- Field Effect
- Power Rating Per Characteristic [CTRD]
- 48.0 Watts Nominal Total Device Dissipation
- Overall Length [ABHP]
- 0.37 Inches Minimum And 0.41 Inches Maximum
- Part Name Assigned By Controlling Agency [CXCY]
- Hexfet, Power Mosfet, Surface Mount
- Voltage Rating In Volts Per Characteristic [CTQN]
- 100.0 Minimum Gate To Source Voltage
- Terminal Type And Quantity [TTQY]
- 3 Pin
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Freight Information 5961-01-613-2003
5961-01-613-2003 has freight characteristics managed by the Republic of Korea.. 5961-01-613-2003 has a variance between NMFC and UFC when transported by rail and the description should be consulted.