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5961-01-605-2247

Transistor

5961016052247 016052247 IXKF40N60SCD1

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Transistor

5961-01-605-2247 TRANSISTOR 5961016052247 016052247

Managed by United States
NSN Created on 17 Apr 2012
Data Last Changed
January 2023
NATO Update Count
2
NATO Data Quality
5961-01-605-2247 TRANSISTOR 5961016052247 016052247 1/1
NSN 5961-01-605-2247 (Generic Image) 1/1

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5961-01-605-2247 Demil Restrictions 5961-01-605-2247

DEMIL: A | DEMILI: 1 | CRITICALITY: X | HMIC: N | PMIC: A | EDC: D | ADPEC: 0

5961-01-605-2247 is a Transistor that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. Demilitarization of this item has been confirmed and is not currently subject to changes. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal. This item is sensitive to Electrostatic Discharge and Electromagnetic Interference.

5961-01-605-2247 HTS and ScheduleB Import and Export 5961-01-605-2247

5961-01-605-2247 End Users End Users 5961-01-605-2247

Republic of Korea (ZH01)
Effective Date:
1 Apr 2012

5961-01-605-2247 Manufacturers Approved Sources 5961-01-605-2247

5961-01-605-2247 Technical Data Datasheet 5961-01-605-2247

Characteristic
Specifications
FIIG
A110A0
Overall Length [ABHP]
41.2 Millimeters Nominal
Overall Height [ABKW]
20.88 Millimeters Nominal
Overall Width [ABMK]
19.91 Millimeters Nominal
Overall Width Across Flats [CCDG]
5.03 Millimeters Nominal
Features Provided [CBBL]
Very High Speed
Special Features [FEAT]
Fast Coolimos Power Mosfet - 2Nd Generation; High Blocking Voltage, Low On Resistance, Low Thermal Resistance Due To Reduced Chip Thickness; Series Schottky Diode Prevents Current Flow Through Mosfet's Body Diode - Very Low Forward Voltage, Fast Switching; Ultra Fast Hiperfred Anti Parallel Diode -Low Coupling Capacity Between Pins And Heatsink, Enlarged Creepage Towards Heatsink, Enlarged Creepage Between High Voltage Pins, Application Friendly Pinout, High Reliability, Industry Standard Outline.

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5961-01-605-2247 Freight Data Freight Information 5961-01-605-2247

5961-01-605-2247 has freight characteristics managed by the Republic of Korea.. 5961-01-605-2247 has a variance between NMFC and UFC when transported by rail and the description should be consulted.