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5961-01-516-5912

Diode Semiconductor Device

5961015165912 015165912 1N4148-1HX

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC. View more Diode Semiconductor Device

5961-01-516-5912 SEMICONDUCTOR DEVICE,DIODE 5961015165912 015165912

Managed by United States
NSN Created on 12 Jan 2004
Data Last Changed
January 2023
NATO Update Count
3
NATO Data Quality
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NSN 5961-01-516-5912 (Generic Image) 1/1

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5961-01-516-5912 Demil Restrictions 5961-01-516-5912

DEMIL: A | DEMILI: 1 | CRITICALITY: X | HMIC: N | PMIC: A | EDC: A | ADPEC: 0

5961-01-516-5912 is a Diode Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. Demilitarization of this item has been confirmed and is not currently subject to changes. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal.

5961-01-516-5912 HTS and ScheduleB Import and Export 5961-01-516-5912

5961-01-516-5912 End Users End Users 5961-01-516-5912

Spain (YB01)
Effective Date:
1 May 2005
Germany (ZG01)
Effective Date:
1 Jan 2004

5961-01-516-5912 Manufacturers Approved Sources 5961-01-516-5912

5961-01-516-5912 Technical Data Datasheet 5961-01-516-5912

Characteristic
Specifications
FIIG
A110A0
Current Rating Per Characteristic [CTQX]
2.00 Milliamperes Zero-Gate-Voltage Source Current Blank
Function For Which Designed [AFZC]
Signal Diode
Maximum Operating Temp Per Measurement Point [CTSG]
-65.0 Deg Celsius Case And 175.0 Deg Celsius Case
Mounting Facility Quantity [AKPV]
2
Mounting Method [AXGY]
Terminal
Inclosure Material [ABBH]
Glass
Semiconductor Material [CTMZ]
Silicon
Overall Length [ABHP]
2.200 Inches Maximum
Special Features [FEAT]
Storage Temperature -65/+175 Degrees C; Total Power Dissipation 500Mw; Current: 200Ma; Hermetically Sealed Glass Package; Cathode Band Polarity; Alpha Numeric Marking
Voltage Rating In Volts Per Characteristic [CTQN]
75.0 Maximum Breakdown Voltage, Collector To Emitter, Sustained And 75.0 Maximum Breakdown Voltage, Collector-To-Base, Emitter Open
Terminal Circle Diameter [AYQS]
0.090 Inches Maximum
Terminal Length [ABJT]
0.200 Inches Maximum
Terminal Type And Quantity [TTQY]
2 Uninsulated Wire Lead

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5961-01-516-5912 Freight Data Freight Information 5961-01-516-5912

5961-01-516-5912 has freight characteristics.. 5961-01-516-5912 has a variance between NMFC and UFC when transported by rail and the description should be consulted.