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5961-01-419-0870
Diode Semiconductor Device
5961014190870 014190870 1N6170
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC. View more Diode Semiconductor Device
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January 2023
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5961014190870 ,DIODE 12 EA NS Request Quotation Updated Every Day 5961-01-419-0870 RQST NE Updated Every
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Restrictions 5961-01-419-0870
5961-01-419-0870 is a Diode Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal.
Import and Export 5961-01-419-0870
- Schedule B
- Subscribe to View Schedule B
- HTS Code
- Subscribe to View HTS Code
End Users 5961-01-419-0870
- France (ZF01)
- Effective Date:
- 1 Sep 1995
Approved Sources 5961-01-419-0870
- Part Number
- Manufacturer
- Status
- 1N6170
- Manufacturer
- 12969 - Micro Uspd Inc (Active)
- Primary Buy
- Primary Buy
Datasheet 5961-01-419-0870
- Characteristic
- Specifications
- FIIG
- Specifications
- A110A0
- Semiconductor Material [CTMZ]
- Silicon
- Inclosure Material [ABBH]
- Glass
- Mounting Method [AXGY]
- Terminal
- Terminal Type And Quantity [TTQY]
- 2 Uninsulated Wire Lead
- Features Provided [CBBL]
- Hermetically Sealed Case
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Freight Information 5961-01-419-0870
5961-01-419-0870 has freight characteristics.. 5961-01-419-0870 has a variance between NMFC and UFC when transported by rail and the description should be consulted.