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5961-01-380-8755
Diode Semiconductor Device
5961013808755 013808755 25F60M
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC. View more Diode Semiconductor Device
January 2023
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Diode Semiconductor Device 5961013808755 Diode Semiconductor Device 5961013808755 RQST NE Updated Every
5961013808755 RQST NE Updated Every Day 5961-01-380-8755 RQST Updated Every Restrictions 5961-01-380
Restrictions 5961-01-380-8755
5961-01-380-8755 is a Diode Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is a confirmed Commerce Control List Item (CCLI). This item is not suspected to be hazardous. This item does not contain a precious metal.
Import and Export 5961-01-380-8755
- Schedule B
- Subscribe to View Schedule B
- HTS Code
- Subscribe to View HTS Code
End Users 5961-01-380-8755
- France (ZF01)
- Effective Date:
- 1 Sep 1993
Approved Sources 5961-01-380-8755
- Part Number
- Manufacturer
- Status
- 25F60M
- Manufacturer
- 81483 - Infineon Technologies Americas Corp (Active)
- Primary Buy
- Primary Buy
Datasheet 5961-01-380-8755
- Characteristic
- Specifications
- FIIG
- Specifications
- A110A0
- Semiconductor Material [CTMZ]
- Silicon
- Voltage Rating In Volts Per Characteristic [CTQN]
- 600.0 Nominal Repetitive Peak Reverse Voltage And 900.0 Nominal Forward Voltage, Peak
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Freight Information 5961-01-380-8755
5961-01-380-8755 has freight characteristics.. 5961-01-380-8755 has a variance between NMFC and UFC when transported by rail and the description should be consulted.