5961-01-359-2012
Diode Semiconductor Device
5961013592012 013592012 GC41549F-155 05-4417-7
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC. View more Diode Semiconductor Device
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Related Documents 5961-01-359-2012 1+ Documents (More...)
United States (US) 4. 5961-01-359-2012 Marketplace Restrictions Approved Sources Datasheet Management
RQST NE Updated Every Day 5961-01-359-2012 RQST Updated Every Day 5961-01-359-2012 RQST NE Related Documents
Restrictions 5961-01-359-2012
5961-01-359-2012 is a Diode Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal. This item is sensitive to Electrostatic Discharge.
Approved Sources 5961-01-359-2012
- Part Number
- Manufacturer
- Status
- GC41549F-155
- Manufacturer
- 50101 - Microsemi Corp - Massachusetts (Active)
- Primary Buy
- Primary Buy
- 05-4417-7
- 26401 - Southwest Research Institute (Active)
- Canceled/Obsolete
- Canceled/Obsolete
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