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5961-01-329-0702

Transistor

5961013290702 013290702 IRF 252

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Transistor

5961-01-329-0702 TRANSISTOR 5961013290702 013290702

Managed by United States
NSN Created on 11 Nov 1990
Data Last Changed
January 2023
NATO Update Count
8
NATO Data Quality
5961-01-329-0702 TRANSISTOR 5961013290702 013290702 1/1
NSN 5961-01-329-0702 (Generic Image) 1/1

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5961-01-329-0702 Related Documents Related Documents 5961-01-329-0702 1+ Documents (More...)

5961-01-329-0702 1+ Documents ( More... ) https//www.nsnlookup.com /fsg-59/fsc-5961/us 5961-01-329-0702
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5961-01-329-0702 Demil Restrictions 5961-01-329-0702

DEMIL: Q | DEMILI: | CRITICALITY: X | HMIC: N | PMIC: U | EDC: A | ADPEC:

5961-01-329-0702 is a Transistor that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is a confirmed Commerce Control List Item (CCLI). This item is not suspected to be hazardous. The precious metals content of this item is unknown.

5961-01-329-0702 HTS and ScheduleB Import and Export 5961-01-329-0702

5961-01-329-0702 End Users End Users 5961-01-329-0702

France (ZF01)
Effective Date:
1 Mar 2000
United Kingdom (ZK01)
Effective Date:
1 Dec 1995

5961-01-329-0702 Manufacturers Approved Sources 5961-01-329-0702

5961-01-329-0702 Technical Data Datasheet 5961-01-329-0702

Characteristic
Specifications
FIIG
A110A0
Voltage Rating In Volts Per Characteristic [CTQN]
200.0 Maximum Base Supply Voltage

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5961-01-329-0702 Freight Data Freight Information 5961-01-329-0702

5961-01-329-0702 has freight characteristics managed by the United Kingdom (UK).. 5961-01-329-0702 has a variance between NMFC and UFC when transported by rail and the description should be consulted.