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5961-01-212-5789

Transistor

5961012125789 012125789 352-1058-052 STJ1035 SJ978H52

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Transistor

5961-01-212-5789 TRANSISTOR 5961012125789 012125789

Managed by United States
NSN Created on 14 Jul 1985
Data Last Changed
May 2023
NATO Update Count
6
NATO Data Quality
5961-01-212-5789 TRANSISTOR 5961012125789 012125789 1/1
NSN 5961-01-212-5789 (Generic Image) 1/1

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5961-01-212-5789 Related Documents Related Documents 5961-01-212-5789 1+ Documents (More...)

DAC: 2 12 Jan 1985 5961-01-197-9725 Transistor STA6215RNCC: 3 | RNVC: 2 | DAC: 6 31 Dec 1984 5961-01-212-5789

5961-01-212-5789 Demil Restrictions 5961-01-212-5789

DEMIL: A | DEMILI: | CRITICALITY: X | HMIC: N | PMIC: A | EDC: | ADPEC:

5961-01-212-5789 is a Transistor that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal.

5961-01-212-5789 HTS and ScheduleB Import and Export 5961-01-212-5789

5961-01-212-5789 End Users End Users 5961-01-212-5789

Australia (ZA01)
Effective Date:
1 Apr 1991

5961-01-212-5789 Manufacturers Approved Sources 5961-01-212-5789

5961-01-212-5789 Technical Data Datasheet 5961-01-212-5789

Characteristic
Specifications
FIIG
A110A0
Current Rating Per Characteristic [CTQX]
7.00 Amperes Source Cutoff Current Maximum And 1.00 Amperes Source Cutoff Current Minimum
Features Provided [CBBL]
Hermetically Sealed Case
Maximum Operating Temp Per Measurement Point [CTSG]
200.0 Deg Celsius Junction
Mounting Facility Quantity [AKPV]
2
Mounting Method [AXGY]
Unthreaded Hole
Semiconductor Material [CTMZ]
Silicon
Inclosure Material [ABBH]
Metal
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation [ALAZ]
To-66
Internal Configuration [ALAS]
Junction Contact
Power Rating Per Characteristic [CTRD]
40.0 Watts Small-Signal Input Power, Common-Collector Preset
Overall Height [ABKW]
0.348 Inches Maximum
Overall Length [ABHP]
1.252 Inches Maximum
Overall Width [ABMK]
0.700 Inches Maximum
Special Features [FEAT]
Junction Pattern Arrangement: Npn
Voltage Rating In Volts Per Characteristic [CTQN]
100.0 Maximum Collector To Base Voltage, Dc And 100.0 Maximum Collector To Emitter Voltage/Static/Base Open And 6.0 Maximum Emitter To Base Voltage, Dc
Terminal Type And Quantity [TTQY]
2 Pin And 1 Case

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5961-01-212-5789 Freight Data Freight Information 5961-01-212-5789

5961-01-212-5789 has freight characteristics.. 5961-01-212-5789 has a variance between NMFC and UFC when transported by rail and the description should be consulted.

5961-01-212-5789 Packaging Data Packaging Data 5961-01-212-5789

Responsible Activity
Packaging Data Source
Primary Inventory Control Activity (PICA)
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Item Pack Level (Unpackaged)

Item Size
Item Weight
Characteristics
Weight/Dimensions Category
Fragility
Item Preservation
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Over 10lb
Less than 85G
No Requirement

Unit Pack Level (Packaged)

Quantity per Pack
Unit Size
Unit Weight
Unit Cube
Preservation Method
Cleaning/Drying
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Preservation Material
Wrapping Material
Cushioning/Dunnage
Cushioning Thickness
Container
Special Marking
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No special marking

Intermediate Pack Level

Quantity of Unit Packs
Container
See Method of Preservation
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