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5961-01-181-3052

Transistor

5961011813052 011813052 40251 505257 209285-008

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Transistor

5961-01-181-3052 TRANSISTOR 5961011813052 011813052

Managed by United States
NSN Created on 8 Jun 1984
Data Last Changed
January 2023
NATO Update Count
10
NATO Data Quality
5961-01-181-3052 TRANSISTOR 5961011813052 011813052 1/1
NSN 5961-01-181-3052 (Generic Image) 1/1

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40251 505257 209285-008 An active semiconductor device with three or more electrodes.
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5961-01-181-3052 Demil Restrictions 5961-01-181-3052

DEMIL: A | DEMILI: | CRITICALITY: X | HMIC: N | PMIC: A | EDC: A | ADPEC:

5961-01-181-3052 is a Transistor that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal.

5961-01-181-3052 HTS and ScheduleB Import and Export 5961-01-181-3052

5961-01-181-3052 End Users End Users 5961-01-181-3052

Germany (ZG01)
Effective Date:
1 Apr 1991
Republic of Korea (ZH01)
Effective Date:
1 Apr 1991
Greece (ZU01)
Effective Date:
1 May 2008

5961-01-181-3052 Manufacturers Approved Sources 5961-01-181-3052

5961-01-181-3052 Technical Data Datasheet 5961-01-181-3052

Characteristic
Specifications
FIIG
A110A0
Current Rating Per Characteristic [CTQX]
8.00 Amperes Repetitive Peak Forward Current Blank
Features Provided [CBBL]
Hermetically Sealed Case
Maximum Operating Temp Per Measurement Point [CTSG]
200.0 Deg Celsius Junction
Mounting Facility Quantity [AKPV]
2
Mounting Method [AXGY]
Unthreaded Hole
Semiconductor Material [CTMZ]
Silicon
Inclosure Material [ABBH]
Metal
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation [ALAZ]
To-3
Internal Configuration [ALAS]
Junction Contact
Internal Junction Configuration [ASCQ]
Npn
Power Rating Per Characteristic [CTRD]
117.0 Watts Small-Signal Input Power, Common-Collector Preset
Overall Height [ABKW]
1.050 Inches Maximum
Overall Length [ABHP]
1.573 Inches Maximum
Overall Width [ABMK]
0.450 Inches Maximum
Transfer Ratio [CTRK]
15.0 Minimum Static Forward Current Transfer Ratio, Common-Emitter And 60.0 Maximum Static Forward Current Transfer Ratio, Common-Emitter
Voltage Rating In Volts Per Characteristic [CTQN]
50.0 Maximum Collector To Base Voltage/Static/Emitter Open And 40.0 Maximum Collector To Emitter Voltage/Static/Base Open And 5.0 Maximum Emitter To Base Voltage, Static, Collector Open
Terminal Type And Quantity [TTQY]
2 Unthreaded Hole And 1 Case

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5961-01-181-3052 Freight Data Freight Information 5961-01-181-3052

5961-01-181-3052 has freight characteristics.. 5961-01-181-3052 has a variance between NMFC and UFC when transported by rail and the description should be consulted.