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5961-01-155-1352

Thyristor Semiconductor Device

5961011551352 011551352 RELEASE6646 2N6607

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Thyristor Semiconductor Device

5961-01-155-1352 SEMICONDUCTOR DEVICE,THYRISTOR 5961011551352 011551352

Managed by United States
NSN Created on 5 Jun 1983
Data Last Changed
January 2023
NATO Update Count
7
NATO Data Quality
5961-01-155-1352 SEMICONDUCTOR DEVICE,THYRISTOR 5961011551352 011551352 1/1
NSN 5961-01-155-1352 (Generic Image) 1/1

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RELEASE6646 2N6607 A bistable semiconductor device comprising three or more junctions which is normally
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5961-01-155-1352 Demil Restrictions 5961-01-155-1352

DEMIL: A | DEMILI: | CRITICALITY: X | HMIC: N | PMIC: A | EDC: A | ADPEC: 0

5961-01-155-1352 is a Thyristor Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. This item does not contain a precious metal.

5961-01-155-1352 HTS and ScheduleB Import and Export 5961-01-155-1352

5961-01-155-1352 End Users End Users 5961-01-155-1352

Republic of Korea (ZH01)
Effective Date:
1 Apr 1991

5961-01-155-1352 Manufacturers Approved Sources 5961-01-155-1352

5961-01-155-1352 Technical Data Datasheet 5961-01-155-1352

Characteristic
Specifications
FIIG
A110A0
Electrode Internally-Electrically Connected To Case [ALBA]
Anode
Current Rating Per Characteristic [CTQX]
275.00 Milliamperes Forward Current, Total Rms Nanoamperes
Features Provided [CBBL]
Hermetically Sealed Case
Maximum Operating Temp Per Measurement Point [CTSG]
150.0 Deg Celsius Junction
Mounting Method [AXGY]
Terminal
Semiconductor Material [CTMZ]
Silicon
Inclosure Material [ABBH]
Metal
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation [ALAZ]
To-18
Internal Configuration [ALAS]
Junction Contact
Power Rating Per Characteristic [CTRD]
100.0 Milliwatts Small-Signal Input Power, Common-Collector Peak
Overall Diameter [ADAV]
0.230 Inches Maximum
Overall Length [ABHP]
0.210 Inches Maximum
Special Features [FEAT]
Internal Junction Configuration Arrangement Pnpn
Voltage Rating In Volts Per Characteristic [CTQN]
100.0 Maximum Repetitive Peak Off-State Voltage
Specification/Standard Data [ZZZK]
80131-Release6646 Professional/Industrial Association Specification
Terminal Circle Diameter [AYQS]
0.100 Inches Nominal
Terminal Length [ABJT]
0.500 Inches Minimum
Terminal Type And Quantity [TTQY]
3 Uninsulated Wire Lead

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5961-01-155-1352 Freight Data Freight Information 5961-01-155-1352

5961-01-155-1352 has freight characteristics.. 5961-01-155-1352 has a variance between NMFC and UFC when transported by rail and the description should be consulted.