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5961-01-112-1827

Transistor

5961011121827 011121827 2N6331 SS25205-501 SE27750-053 55-003-0005

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Transistor

5961-01-112-1827 TRANSISTOR 5961011121827 011121827

Managed by United States
NSN Created on 29 Apr 1981
Data Last Changed
January 2023
NATO Update Count
16
NATO Data Quality
5961-01-112-1827 TRANSISTOR 5961011121827 011121827 1/1
NSN 5961-01-112-1827 (Generic Image) 1/1

5961-01-112-1827 Stock and Availability Marketplace 5961-01-112-1827

5961-01-112-1827 Related Documents Related Documents 5961-01-112-1827 1+ Documents (More...)

DAC: 6 27 Nov 1979 5961-01-086-5052 Transistor STA0326RNCC: 5 | RNVC: 9 | DAC: 5 30 Nov 1979 5961-01-112-1827

5961-01-112-1827 Demil Restrictions 5961-01-112-1827

DEMIL: Q | DEMILI: | CRITICALITY: X | HMIC: N | PMIC: U | EDC: A | ADPEC:

5961-01-112-1827 is a Transistor that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is a confirmed Commerce Control List Item (CCLI). This item is not suspected to be hazardous. The precious metals content of this item is unknown.

5961-01-112-1827 HTS and ScheduleB Import and Export 5961-01-112-1827

5961-01-112-1827 End Users End Users 5961-01-112-1827

Canada (ZC01)
Effective Date:
1 Sep 2007
United Kingdom (ZK01)
Effective Date:
1 Apr 1991

5961-01-112-1827 Manufacturers Approved Sources 5961-01-112-1827

5961-01-112-1827 Technical Data Datasheet 5961-01-112-1827

Characteristic
Specifications
FIIG
A110A0
Current Rating Per Characteristic [CTQX]
30.00 Amperes Maximum Collector Current, Dc
Maximum Operating Temp Per Measurement Point [CTSG]
200.0 Deg Celsius Junction
Mounting Facility Quantity [AKPV]
2
Mounting Method [AXGY]
Unthreaded Hole
Semiconductor Material [CTMZ]
Silicon
Inclosure Material [ABBH]
Metal
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation [ALAZ]
To-3
Internal Configuration [ALAS]
Junction Contact
Power Rating Per Characteristic [CTRD]
200.0 Watts Maximum Total Device Dissipation
Overall Diameter [ADAV]
0.875 Inches Maximum
Overall Length [ABHP]
0.375 Inches Nominal
Special Features [FEAT]
Junction Pattern Arrangement: Pnp
Voltage Rating In Volts Per Characteristic [CTQN]
100.0 Maximum Breakdown Voltage, Collector To Emitter, Sustained
Terminal Type And Quantity [TTQY]
2 Uninsulated Wire Lead And 1 Case

5961-01-112-1827 Related Items NATO Stock Numbers Related to 5961-01-112-1827

5961-01-112-1827 Freight Data Freight Information 5961-01-112-1827

5961-01-112-1827 has freight characteristics.. 5961-01-112-1827 has a variance between NMFC and UFC when transported by rail and the description should be consulted.