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5961-01-030-7247
Transistor
5961010307247 010307247 FET-1
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Transistor
November 2023
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Restrictions 5961-01-030-7247
5961-01-030-7247 is a Transistor that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. Demilitarization of this item has been confirmed and is not currently subject to changes. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. The precious metals content of this item is unknown.
End Users 5961-01-030-7247
- NASA (G900)
- Effective Date:
- 1 Apr 1991
Approved Sources 5961-01-030-7247
- Part Number
- Manufacturer
- Status
- FET-1
- Manufacturer
- 03508 - General Electric Co Semi-Conductor (Obsolete)
- Original Design
- Original Design
Datasheet 5961-01-030-7247
- Characteristic
- Specifications
- Semiconductor Material [CTMZ]
- Specifications
- Silicon
- Internal Configuration [ALAS]
- Field Effect
- Power Rating Per Characteristic [CTRD]
- 200.0 Milliwatts Maximum Total Power Dissipation
- Overall Diameter [ADAV]
- 0.175 Inches Minimum And 0.205 Inches Maximum
- Overall Height [ABKW]
- 0.170 Inches Minimum And 0.210 Inches Maximum
- Overall Width Across Flats [CCDG]
- 0.125 Inches Minimum And 0.165 Inches Maximum
- Terminal Type And Quantity [TTQY]
- 3 Uninsulated Wire Lead
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Freight Information 5961-01-030-7247
5961-01-030-7247 has freight characteristics.. 5961-01-030-7247 has a variance between NMFC and UFC when transported by rail and the description should be consulted.