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5961-01-024-3735

Transistor

5961010243735 010243735 RELEASE6027 2N5824

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Transistor

5961-01-024-3735 TRANSISTOR 5961010243735 010243735

Managed by United States
NSN Created on 9 Jul 1976
Data Last Changed
January 2023
NATO Update Count
12
NATO Data Quality
5961-01-024-3735 TRANSISTOR 5961010243735 010243735 1/1
NSN 5961-01-024-3735 (Generic Image) 1/1

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5961-01-024-3735 Related Documents Related Documents 5961-01-024-3735 1+ Documents (More...)

RELEASE6027 2N5824 An active semiconductor device with three or more electrodes.
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5961-01-024-3735 Demil Restrictions 5961-01-024-3735

DEMIL: A | DEMILI: | CRITICALITY: X | HMIC: N | PMIC: U | EDC: | ADPEC:

5961-01-024-3735 is a Transistor that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. The precious metals content of this item is unknown.

5961-01-024-3735 HTS and ScheduleB Import and Export 5961-01-024-3735

5961-01-024-3735 End Users End Users 5961-01-024-3735

Saudi Arabia (YS01)
Effective Date:
1 Feb 2015

5961-01-024-3735 Manufacturers Approved Sources 5961-01-024-3735

5961-01-024-3735 Technical Data Datasheet 5961-01-024-3735

Characteristic
Specifications
FIIG
A110A0
Current Rating Per Characteristic [CTQX]
100.00 Milliamperes Repetitive Peak Forward Current Blank
Features Provided [CBBL]
Hermetically Sealed Case
Maximum Operating Temp Per Measurement Point [CTSG]
200.0 Deg Celsius Junction
Mounting Method [AXGY]
Terminal
Semiconductor Material [CTMZ]
Silicon
Inclosure Material [ABBH]
Metal
Internal Configuration [ALAS]
Junction Contact
Power Rating Per Characteristic [CTRD]
360.0 Milliwatts Small-Signal Input Power, Common-Collector Minimum
Overall Diameter [ADAV]
0.205 Inches Maximum
Overall Length [ABHP]
0.190 Inches Maximum
Special Features [FEAT]
Junction Pattern Arrangement: Npn
Transfer Ratio [CTRK]
60.0 Nominal Small-Signal Short-Circuit Forward Current Transfer Ratio, Common-Emitter
Voltage Rating In Volts Per Characteristic [CTQN]
50.0 Maximum Breakdown Voltage, Collector-To-Base, Emitter Open And 40.0 Maximum Breakdown Voltage, Collector-To-Emitter, Base Open And 5.0 Maximum Emitter To Base Voltage, Static, Collector Open
Specification/Standard Data [ZZZK]
80131-Release6027 Professional/Industrial Association Specification
Terminal Circle Diameter [AYQS]
0.100 Inches Nominal
Terminal Length [ABJT]
0.500 Inches Minimum
Terminal Type And Quantity [TTQY]
3 Pin

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5961-01-024-3735 Freight Data Freight Information 5961-01-024-3735

5961-01-024-3735 has freight characteristics.. 5961-01-024-3735 has a variance between NMFC and UFC when transported by rail and the description should be consulted.

5961-01-024-3735 Packaging Data Packaging Data 5961-01-024-3735

Responsible Activity
Packaging Data Source
Primary Inventory Control Activity (PICA)
Packaging Data does not meet current MIL-STD-2073-1E

Item Pack Level (Unpackaged)

Item Size
Item Weight
Characteristics
Weight/Dimensions Category
Fragility
Item Preservation
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0.25 lb or less, one dimension 2" or less, other dimensions less than 24"
85 to 110G
No Requirement

Unit Pack Level (Packaged)

Quantity per Pack
Unit Size
Unit Weight
Unit Cube
Preservation Method
Cleaning/Drying
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Preservation Material
Wrapping Material
Cushioning/Dunnage
Cushioning Thickness
Container
Special Marking
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--
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No special marking

Intermediate Pack Level

Quantity of Unit Packs
Container
See Method of Preservation
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