Premium Information is available for this item - Upgrade for $1 a day
5961-01-016-8487
Thyristor Semiconductor Device
5961010168487 010168487 C385MX46
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Thyristor Semiconductor Device
![]()
November 2023
13

Marketplace 5961-01-016-8487
Request a Quotation from participating marketplace vendors
Related Documents 5961-01-016-8487 1+ Documents (More...)
Thyristor Semiconductor Device 5961010168487 RQST NE Updated Every Day 5961-01-016-8487 RQST Updated
Every Day 5961-01-016-8487 RQST NE Related Documents 5961-01-016-8487 1+ Documents ( More... ) https
Restrictions 5961-01-016-8487
5961-01-016-8487 is a Thyristor Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. Demilitarization of this item has been confirmed and is not currently subject to changes. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. The precious metals content of this item is unknown.
End Users 5961-01-016-8487
- NASA (G900)
- Effective Date:
- 1 Apr 1991
- Spain (YB01)
- Effective Date:
- 1 Feb 1994
Approved Sources 5961-01-016-8487
- Part Number
- Manufacturer
- Status
- C385MX46
- Manufacturer
- 03508 - General Electric Co Semi-Conductor (Obsolete)
- Original Design
- Original Design
- C385MX46
- 09214 - General Electric Co Semi-Conductor (Obsolete)
- Secondary Buy
- Secondary Buy
Datasheet 5961-01-016-8487
- Characteristic
- Specifications
- Current Rating Per Characteristic [CTQX]
- Specifications
- 400.00 Amperes Drain Current Nanoamperes
- Features Provided [CBBL]
- Hermetically Sealed Case
- Maximum Operating Temp Per Measurement Point [CTSG]
- 125.0 Deg Celsius Junction
- Mounting Method [AXGY]
- Compression
- Semiconductor Material [CTMZ]
- Silicon
- Inclosure Material [ABBH]
- Ceramic
- Power Rating Per Characteristic [CTRD]
- 2.0 Watts Small-Signal Input Power, Common-Collector Peak
- Overall Diameter [ADAV]
- 1.500 Inches Maximum
- Overall Length [ABHP]
- 0.550 Inches Maximum
- Voltage Rating In Volts Per Characteristic [CTQN]
- 600.0 Nominal Off-State Voltage, Rms Total
- Terminal Type And Quantity [TTQY]
- 2 Tab, Solder Lug
Similar Supply Items to 5961-01-016-8487


















Freight Information 5961-01-016-8487
5961-01-016-8487 has freight characteristics.. 5961-01-016-8487 has a variance between NMFC and UFC when transported by rail and the description should be consulted.