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5961-01-016-8487

Thyristor Semiconductor Device

5961010168487 010168487 C385MX46

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Thyristor Semiconductor Device

5961-01-016-8487 SEMICONDUCTOR DEVICE,THYRISTOR 5961010168487 010168487

Managed by United States
NSN Created on 25 Feb 1976
Data Last Changed
November 2023
NATO Update Count
13
NATO Data Quality
5961-01-016-8487 SEMICONDUCTOR DEVICE,THYRISTOR 5961010168487 010168487 1/1
NSN 5961-01-016-8487 (Generic Image) 1/1

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5961-01-016-8487 Demil Restrictions 5961-01-016-8487

DEMIL: A | DEMILI: 1 | CRITICALITY: X | HMIC: N | PMIC: U | EDC: | ADPEC:

5961-01-016-8487 is a Thyristor Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. Demilitarization of this item has been confirmed and is not currently subject to changes. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. The precious metals content of this item is unknown.

5961-01-016-8487 End Users End Users 5961-01-016-8487

NASA (G900)
Effective Date:
1 Apr 1991
Spain (YB01)
Effective Date:
1 Feb 1994

5961-01-016-8487 Manufacturers Approved Sources 5961-01-016-8487

5961-01-016-8487 Technical Data Datasheet 5961-01-016-8487

Characteristic
Specifications
Current Rating Per Characteristic [CTQX]
400.00 Amperes Drain Current Nanoamperes
Features Provided [CBBL]
Hermetically Sealed Case
Maximum Operating Temp Per Measurement Point [CTSG]
125.0 Deg Celsius Junction
Mounting Method [AXGY]
Compression
Semiconductor Material [CTMZ]
Silicon
Inclosure Material [ABBH]
Ceramic
Power Rating Per Characteristic [CTRD]
2.0 Watts Small-Signal Input Power, Common-Collector Peak
Overall Diameter [ADAV]
1.500 Inches Maximum
Overall Length [ABHP]
0.550 Inches Maximum
Voltage Rating In Volts Per Characteristic [CTQN]
600.0 Nominal Off-State Voltage, Rms Total
Terminal Type And Quantity [TTQY]
2 Tab, Solder Lug

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5961-01-016-8487 Freight Data Freight Information 5961-01-016-8487

5961-01-016-8487 has freight characteristics.. 5961-01-016-8487 has a variance between NMFC and UFC when transported by rail and the description should be consulted.