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5961-00-883-3779
Diode Semiconductor Device
5961008833779 008833779 IN276
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC. View more Diode Semiconductor Device
January 2023
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Restrictions 5961-00-883-3779
5961-00-883-3779 is a Diode Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. Demilitarization of this item has been confirmed and is not currently subject to changes. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. The precious metals content of this item is unknown.
Import and Export 5961-00-883-3779
- Schedule B
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- HTS Code
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End Users 5961-00-883-3779
- Singapore (YJ01)
- Effective Date:
- 1 Apr 1991
- France (ZF01)
- Effective Date:
- 1 Apr 1991
- Republic of Korea (ZH01)
- Effective Date:
- 1 Apr 1991
- Italy (ZR01)
- Effective Date:
- 1 Jul 1997
Approved Sources 5961-00-883-3779
- Part Number
- Manufacturer
- Status
- IN276
- Manufacturer
- 80131 - Electronic Industries Association (Active)
- Primary Buy
- Primary Buy
Datasheet 5961-00-883-3779
- Characteristic
- Specifications
- FIIG
- Specifications
- A110A0
- Semiconductor Material [CTMZ]
- Germanium
- Terminal Type And Quantity [TTQY]
- 2 Uninsulated Wire Lead
- Features Provided [CBBL]
- Hermetically Sealed Case
- Nondefinitive Spec/Std Data [ZZZT]
- No. 1N276 Type
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Freight Information 5961-00-883-3779
5961-00-883-3779 has freight characteristics.. 5961-00-883-3779 has a variance between NMFC and UFC when transported by rail and the description should be consulted.