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5961-00-498-8429
Thyristor Semiconductor Device
5961004988429 004988429 C155B C55B
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO. View more Thyristor Semiconductor Device
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Restrictions 5961-00-498-8429
5961-00-498-8429 is a Thyristor Semiconductor Device that does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. This item is considered a low risk when released from the control of the Department of Defense. The item may still be subject to the requirements of the Export Administration Regulations (EAR) and the Code of Federal Regulations (CFR). This item is not suspected to be hazardous. The precious metals content of this item is unknown.
Import and Export 5961-00-498-8429
- Schedule B
- Subscribe to View Schedule B
- HTS Code
- Subscribe to View HTS Code
End Users 5961-00-498-8429
- NASA (G860)
- Effective Date:
- 1 Apr 1991
- Canada (ZC01)
- Effective Date:
- 1 Apr 1991
Approved Sources 5961-00-498-8429
- Part Number
- Manufacturer
- Status
- C155B
- Manufacturer
- 03508 - General Electric Co Semi-Conductor (Obsolete)
- Original Design
- Original Design
- C55B
- 09214 - General Electric Co Semi-Conductor (Obsolete)
- Canceled/Obsolete
- Canceled/Obsolete
Datasheet 5961-00-498-8429
- Characteristic
- Specifications
- FIIG
- Specifications
- A110A0
- Current Rating Per Characteristic [CTQX]
- 1400.00 Amperes Forward Current, Average Absolute
- Features Provided [CBBL]
- Hermetically Sealed Case
- Maximum Operating Temp Per Measurement Point [CTSG]
- 125.0 Deg Celsius Junction
- Mounting Facility Quantity [AKPV]
- 1
- Mounting Method [AXGY]
- Threaded Stud
- Nominal Thread Size [CQJX]
- 0.500 Inches
- Semiconductor Material [CTMZ]
- Silicon
- Inclosure Material [ABBH]
- Metal
- Internal Configuration [ALAS]
- Junction Contact
- Power Rating Per Characteristic [CTRD]
- 2.0 Watts Small-Signal Input Power, Common-Collector Blank
- Overall Length [ABHP]
- 1.030 Inches Nominal
- Overall Width Across Flats [CCDG]
- 1.062 Inches Nominal
- Special Features [FEAT]
- Junction Pattern Arrangement: Pnpn
- Voltage Rating In Volts Per Characteristic [CTQN]
- 240.0 Maximum Breakover Voltage, Dc
- Terminal Type And Quantity [TTQY]
- 1 Threaded Stud And 2 Tab, Solder Lug
- Thread Series Designator [THSD]
- Unf
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Freight Information 5961-00-498-8429
5961-00-498-8429 has freight characteristics.. 5961-00-498-8429 has a variance between NMFC and UFC when transported by rail and the description should be consulted.
Packaging Data 5961-00-498-8429
- Responsible Activity
- Packaging Data Source
- Primary Inventory Control Activity (PICA)
- Packaging Data does not meet current MIL-STD-2073-1E
Item Pack Level (Unpackaged)
- Item Size
- Item Weight
- Characteristics
- Weight/Dimensions Category
- Fragility
- Item Preservation
- Item Weight
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Unit Pack Level (Packaged)
- Quantity per Pack
- Unit Size
- Unit Weight
- Unit Cube
- Preservation Method
- Cleaning/Drying
- Unit Size
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- Preservation Material
- Wrapping Material
- Cushioning/Dunnage
- Cushioning Thickness
- Container
- Special Marking
- Wrapping Material
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Intermediate Pack Level
- Quantity of Unit Packs
- Container
- See Method of Preservation
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