5961-14-425-2102
Diode Semiconductor Device
5961144252102 144252102 1N5408 000400200
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC. View more Diode Semiconductor Device
Managed by France
NSN Created on 24 Jun 1988
Data Last Changed
January 2023
January 2023
NATO Update Count
1
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1N5408 000400200 A two electrode semiconductor device having an asymmetrical voltage - current characteristic
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-2700Semiconductor Device Assembly5961999792700 999792700 2952790 36056060 IMT00369 EMG 22-DIO 4E-1N5408
5961-99-979-2700 Semiconductor Device Assembly 5961999792700 295279036056060IMT00369EMG 22-DIO 4E-1N5408
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1N5408-E3 261-312 C3032401 P300J 087970 NTE5806 1N5408A A two electrode semiconductor device having
SEMICONDUCTOR DEVICE,DIODE 1 EA NS Request Quotation 1N5408-E3 SEMICONDUCTOR DEVICE,DIODE 370 EA NS
1N5408-E3 261-312 C3032401 P300J 087970 NTE5806 1N5408A A two electrode semiconductor device having
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End Users 5961-14-425-2102
- Singapore (YJ)
- France (ZF)
- Turkey (ZW)
Approved Sources 5961-14-425-2102
- Part Number
- Manufacturer
- Status
- 1N5408
- Manufacturer
- F0002 - Fieec (Federation Des Industries (Active)
- Definitive Standard
- Definitive Standard
- 1N5408
- 14552 - Microsemi Corporation (Replaced)
- Primary Buy
- Primary Buy
- 1N5408
- 81483 - Infineon Technologies Americas Corp (Active)
- Primary Buy
- Primary Buy
- 1N5408
- F4597 - Nxp Semiconductors France (Active)
- Secondary Buy
- Secondary Buy
- 000400200
- F5430 - Branson Ultrasons (Active)
- Secondary Buy
- Secondary Buy
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