Intelliepi Ir, Inc
Dba Intelliepi Ir Inc
CAGE Code: 66SK1
NCAGE Code: 66SK1
Status: Active
Type: Manufacturer
Dun & Bradstreet (DUNS): 964989201
Summary
Intelliepi Ir, Inc, Dba Intelliepi Ir Inc is an Active Manufacturer with the Cage Code 66SK1 and is tracked by Dun & Bradstreet under DUNS Number 964989201..
Address
201 E Arapaho Rd
Ste 210
Richardson TX 75081-6203
United States
Points of Contact
No Points of Contact...
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Frequently Asked Questions (FAQ) for CAGE 66SK1
- What is CAGE Code 66SK1?
- 66SK1 is the unique identifier used by NATO Organizations to reference the physical entity known as Intelliepi Ir, Inc Dba Intelliepi Ir Inc located at 201 E Arapaho Rd, Ste 210, Richardson TX 75081-6203, United States.
- Who is CAGE Code 66SK1?
- 66SK1 refers to Intelliepi Ir, Inc Dba Intelliepi Ir Inc located at 201 E Arapaho Rd, Ste 210, Richardson TX 75081-6203, United States.
- Where is CAGE Code 66SK1 Located?
- CAGE Code 66SK1 is located in Richardson, TX, USA.
Contracting History for CAGE 66SK1 Most Recent 25 Records
- W909MY22C0017
- Sttr: Lwir Sls-Based Linear Mode Apd Materials Strain-Balanced To Large Diameter Gasb Substrate
- 23 May 2022
- Sttr: Lwir Sls-Based Linear Mode Apd Materials Strain-Balanced To Large Diameter Gasb Substrate
- Acc-Aberdeen Proving Grounds Cont C
- Department Of Defense (Dod)
- $550,000.00
- Department Of Defense (Dod)
- W909MY22C0017
- Adding Fund Into The Initial Contract
- 30 Mar 2023
- Adding Fund Into The Initial Contract
- Acc-Aberdeen Proving Grounds Cont C
- Department Of Defense (Dod)
- $1,100,000.00
- Department Of Defense (Dod)
- W909MY22C0017
- Correct Funded Amount In Modification P00001
- 31 Mar 2023
- Correct Funded Amount In Modification P00001
- Acc-Aberdeen Proving Grounds Cont C
- Department Of Defense (Dod)
- $1,100,000.00
- Department Of Defense (Dod)
- FA865122P0078
- Large Format Iii-V Interband Cascade Light Emitting Diode (Icled) Materials For Advancement Of Scene Projector Technology
- 13 Dec 2021
- Large Format Iii-V Interband Cascade Light Emitting Diode (Icled) Materials For Advancement Of Scene Projector Technology
- Fa8651 Afrl Rwk
- Department Of Defense (Dod)
- $100,000.00
- Department Of Defense (Dod)
- FA865122P0078
- Large Format Iii-Iv Materials For Advancement Of Scene Projector Technology
- 6 Jan 2022
- Large Format Iii-Iv Materials For Advancement Of Scene Projector Technology
- Fa8651 Afrl Rwk
- Department Of Defense (Dod)
- $100,000.00
- Department Of Defense (Dod)
- FA864921P0318
- Development Of High-Absorption Sls Detector Materials For Mwir Fpa Applications
- 4 Feb 2021
- Development Of High-Absorption Sls Detector Materials For Mwir Fpa Applications
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $50,000.00
- Department Of Defense (Dod)
- FA865120C0020
- Advanced Type-Ii Strained Layer Superlattice (Sls) Materials For High Operating Temperature For Hot Mid-Wave Infrared (M
- 8 May 2020
- Advanced Type-Ii Strained Layer Superlattice (Sls) Materials For High Operating Temperature For Hot Mid-Wave Infrared (M
- Fa8651 Afrl Rwk
- Department Of Defense (Dod)
- $750,000.00
- Department Of Defense (Dod)
- FA865120C0020
- Advanced Type-Ii Strained Layer Superlattice (Sls) Materials For High Operating Temperature For Hot Mid-Wave Infrared (Mwir) Applications
- 7 Nov 2019
- Advanced Type-Ii Strained Layer Superlattice (Sls) Materials For High Operating Temperature For Hot Mid-Wave Infrared (Mwir) Applications
- Fa8651 Afrl Rwk
- Department Of Defense (Dod)
- $313,635.00
- Department Of Defense (Dod)
- FA865120C0020
- Hierarchical And-Or Structures For Locallization And Object Recognition
- 26 May 2020
- Hierarchical And-Or Structures For Locallization And Object Recognition
- Fa8651 Afrl Rwk
- Department Of Defense (Dod)
- $750,000.00
- Department Of Defense (Dod)
- FA864920P0434
- Antimonide-Based Epi Materials For Multifunctional Lidar Receiver Array Application - Sbir I
- 5 Mar 2020
- Antimonide-Based Epi Materials For Multifunctional Lidar Receiver Array Application - Sbir I
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $150,000.00
- Department Of Defense (Dod)
- 80NSSC19C0076
- Advanced Type Ii Sls Materials For Large Format Fpa Applications
- 25 Sep 2019
- Advanced Type Ii Sls Materials For Large Format Fpa Applications
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $500,000.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0076
- Advanced Type Ii Sls Materials For Large Format Fpa Applications
- 22 Jun 2021
- Advanced Type Ii Sls Materials For Large Format Fpa Applications
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $500,000.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0076
- Advanced Type Ii Sls Materials For Large Format Fpa Applications
- 10 Nov 2020
- Advanced Type Ii Sls Materials For Large Format Fpa Applications
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $500,000.00
- National Aeronautics And Space Administration (Nasa)
- FA865119P0009
- Advanced Type-Ii Sls Materials For Hot Mwir Fpa Applications
- 2 Nov 2018
- Advanced Type-Ii Sls Materials For Hot Mwir Fpa Applications
- Fa8651 Afrl Rwk
- Department Of Defense (Dod)
- $150,000.00
- Department Of Defense (Dod)
- FA865119P0009
- Advanced Type-Ii Strained Layer Superlattice (Sls) Materials For High Operating Temperature (Hot) Mid-Wave Infrared (Mwir) Focal Plane Array (Fpa)
- 17 Jan 2019
- Advanced Type-Ii Strained Layer Superlattice (Sls) Materials For High Operating Temperature (Hot) Mid-Wave Infrared (Mwir) Focal Plane Array (Fpa)
- Fa8651 Afrl Rwk
- Department Of Defense (Dod)
- $150,000.00
- Department Of Defense (Dod)
- NNX16CP08C
- Igf::Ot::Igf This Phase Ii Sbir Proposes To Further Develop High Performance (Low Dark Current, High Quantum Efficiency, And Low Nedt) Infrared Epitaxy Materials Based On Type Ii Strained Layer Superlattice (Sls) For Large Format Space-Based Sensor Applications. The Epi Materials Will Be Grown With Sb-Capable Multi-Wafer Production Molecular Beam Epitaxy (Mbe) Reactor At Intelliepi Ir. The Initial Goal Includes Achieving Qe Of At Least 40% With Lwir Spectral Wavelength Band Near 12 Um. The Sls Detector Design Will Be Developed In Consultation With The Infrared Detector Group At Jpl To Ensure That This Effort Addresses Nasa Needs. In The Superlattice Engineered Structure, Many Detector Properties Are Determined Once Epitaxial Growth Is Completed. The Technical Approach Will Be To Develop Improved Epitaxial Stack Design With A Goal To Dramatically Improve Detector Properties. This Is Based On Existing High Performance Gasb-Based Type-Ii Sls Detector Growth Technology, With Novel Design, Development Of Mbe Growth To Implement The Design, And Fabrication And Characterization Of Devices From The Epi Grown Material. The Objective Is To Dramatically Improve Quantum Efficiency In The Detector Structure. The Phaqse Ii Effort Will Focus On Fpa Demonstration.
- 5 Jul 2018
- Igf::Ot::Igf This Phase Ii Sbir Proposes To Further Develop High Performance (Low Dark Current, High Quantum Efficiency, And Low Nedt) Infrared Epitaxy Materials Based On Type Ii Strained Layer Superlattice (Sls) For Large Format Space-Based Sensor Applications. The Epi Materials Will Be Grown With Sb-Capable Multi-Wafer Production Molecular Beam Epitaxy (Mbe) Reactor At Intelliepi Ir. The Initial Goal Includes Achieving Qe Of At Least 40% With Lwir Spectral Wavelength Band Near 12 Um. The Sls Detector Design Will Be Developed In Consultation With The Infrared Detector Group At Jpl To Ensure That This Effort Addresses Nasa Needs. In The Superlattice Engineered Structure, Many Detector Properties Are Determined Once Epitaxial Growth Is Completed. The Technical Approach Will Be To Develop Improved Epitaxial Stack Design With A Goal To Dramatically Improve Detector Properties. This Is Based On Existing High Performance Gasb-Based Type-Ii Sls Detector Growth Technology, With Novel Design, Development Of Mbe Growth To Implement The Design, And Fabrication And Characterization Of Devices From The Epi Grown Material. The Objective Is To Dramatically Improve Quantum Efficiency In The Detector Structure. The Phaqse Ii Effort Will Focus On Fpa Demonstration.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $750,000.00
- National Aeronautics And Space Administration (Nasa)
- NNX16CP08C
- Igf::Ot::Igf This Phase Ii Sbir Proposes To Further Develop High Performance (Low Dark Current, High Quantum Efficiency, And Low Nedt) Infrared Epitaxy Materials Based On Type Ii Strained Layer Superlattice (Sls) For Large Format Space-Based Sensor Applications. The Epi Materials Will Be Grown With Sb-Capable Multi-Wafer Production Molecular Beam Epitaxy (Mbe) Reactor At Intelliepi Ir. The Initial Goal Includes Achieving Qe Of At Least 40% With Lwir Spectral Wavelength Band Near 12 Um. The Sls Detector Design Will Be Developed In Consultation With The Infrared Detector Group At Jpl To Ensure That This Effort Addresses Nasa Needs. In The Superlattice Engineered Structure, Many Detector Properties Are Determined Once Epitaxial Growth Is Completed. The Technical Approach Will Be To Develop Improved Epitaxial Stack Design With A Goal To Dramatically Improve Detector Properties. This Is Based On Existing High Performance Gasb-Based Type-Ii Sls Detector Growth Technology, With Novel Design, Development Of Mbe Growth To Implement The Design, And Fabrication And Characterization Of Devices From The Epi Grown Material. The Objective Is To Dramatically Improve Quantum Efficiency In The Detector Structure. The Phaqse Ii Effort Will Focus On Fpa Demonstration.
- 3 Jun 2018
- Igf::Ot::Igf This Phase Ii Sbir Proposes To Further Develop High Performance (Low Dark Current, High Quantum Efficiency, And Low Nedt) Infrared Epitaxy Materials Based On Type Ii Strained Layer Superlattice (Sls) For Large Format Space-Based Sensor Applications. The Epi Materials Will Be Grown With Sb-Capable Multi-Wafer Production Molecular Beam Epitaxy (Mbe) Reactor At Intelliepi Ir. The Initial Goal Includes Achieving Qe Of At Least 40% With Lwir Spectral Wavelength Band Near 12 Um. The Sls Detector Design Will Be Developed In Consultation With The Infrared Detector Group At Jpl To Ensure That This Effort Addresses Nasa Needs. In The Superlattice Engineered Structure, Many Detector Properties Are Determined Once Epitaxial Growth Is Completed. The Technical Approach Will Be To Develop Improved Epitaxial Stack Design With A Goal To Dramatically Improve Detector Properties. This Is Based On Existing High Performance Gasb-Based Type-Ii Sls Detector Growth Technology, With Novel Design, Development Of Mbe Growth To Implement The Design, And Fabrication And Characterization Of Devices From The Epi Grown Material. The Objective Is To Dramatically Improve Quantum Efficiency In The Detector Structure. The Phaqse Ii Effort Will Focus On Fpa Demonstration.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $750,000.00
- National Aeronautics And Space Administration (Nasa)
- W909MY21P0004
- Sttr: Lwir Sls-Based Linear Mode Apd Materials Strain-Balanced To Large Diameter Gasb Substrate
- 7 Dec 2020
- Sttr: Lwir Sls-Based Linear Mode Apd Materials Strain-Balanced To Large Diameter Gasb Substrate
- Acc-Aberdeen Proving Grounds Cont C
- Department Of Defense (Dod)
- $166,500.00
- Department Of Defense (Dod)
- FA865119P0009
- Advanced Type-Ii Sls Materials For Hot Mwir Fpa Applicationsi
- 17 Oct 2018
- Advanced Type-Ii Sls Materials For Hot Mwir Fpa Applicationsi
- Fa8651 Afrl Rwk
- Department Of Defense (Dod)
- $150,000.00
- Department Of Defense (Dod)
- W911NF22P0068
- New Start Sttr Phase I - High-Temperature Low-Voltage Apd Material For Army Extended Swir Applications
- 28 Sep 2022
- New Start Sttr Phase I - High-Temperature Low-Voltage Apd Material For Army Extended Swir Applications
- W6qk Acc-Apg Durham
- Department Of Defense (Dod)
- $173,000.00
- Department Of Defense (Dod)
- 80NSSC18C0005
- Intelliepi Ir, Inc. Proposes To Mature Infrared Detector Technology Using Type Ii Strained Layer Superlattice Infrared Photodetector Based On Sb-Capable Multi-Wafer Molecular Beam Epitaxy Production For Commercialization. In This Proposed Effort, Intelliepi-Ir Will Focus On Advancing Type Ii Sls Infrared 8/3/2017 Ccrpp-17-1-2017-1-1520 | Abstract - High Qe Type Ii Sls Materials For Fpa Applications Https://Ehb8.Gsfc.Nasa.Gov/Contracts/Protected/Readproposals.Do?Actionread&Proposalidccrpp_17_C1_171520&Doctypeformb&Handbook 2/2 Photodetector Technology For Commercial, Military And Nasa Fpa Applications And Intelliepi-Ir Will Evolve Imaging Technology Based On Novel Device Architecture And Advanced Mbe Growth Technique. The Materials Produced Under This Effort Will Be Advanced To Higher Readiness Level Consistent With Customer Requirements For Commercial Insertion And Market Development.
- 22 May 2018
- Intelliepi Ir, Inc. Proposes To Mature Infrared Detector Technology Using Type Ii Strained Layer Superlattice Infrared Photodetector Based On Sb-Capable Multi-Wafer Molecular Beam Epitaxy Production For Commercialization. In This Proposed Effort, Intelliepi-Ir Will Focus On Advancing Type Ii Sls Infrared 8/3/2017 Ccrpp-17-1-2017-1-1520 | Abstract - High Qe Type Ii Sls Materials For Fpa Applications Https://Ehb8.Gsfc.Nasa.Gov/Contracts/Protected/Readproposals.Do?Actionread&Proposalidccrpp_17_C1_171520&Doctypeformb&Handbook 2/2 Photodetector Technology For Commercial, Military And Nasa Fpa Applications And Intelliepi-Ir Will Evolve Imaging Technology Based On Novel Device Architecture And Advanced Mbe Growth Technique. The Materials Produced Under This Effort Will Be Advanced To Higher Readiness Level Consistent With Customer Requirements For Commercial Insertion And Market Development.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $750,000.00
- National Aeronautics And Space Administration (Nasa)
- NNX16CP08C
- Igf::Ot::Igf This Phase Ii Sbir Proposes To Further Develop High Performance (Low Dark Current, High Quantum Efficiency, And Low Nedt) Infrared Epitaxy Materials Based On Type Ii Strained Layer Superlattice (Sls) For Large Format Space-Based Sensor Applications. The Epi Materials Will Be Grown With Sb-Capable Multi-Wafer Production Molecular Beam Epitaxy (Mbe) Reactor At Intelliepi Ir. The Initial Goal Includes Achieving Qe Of At Least 40% With Lwir Spectral Wavelength Band Near 12 Um. The Sls Detector Design Will Be Developed In Consultation With The Infrared Detector Group At Jpl To Ensure That This Effort Addresses Nasa Needs. In The Superlattice Engineered Structure, Many Detector Properties Are Determined Once Epitaxial Growth Is Completed. The Technical Approach Will Be To Develop Improved Epitaxial Stack Design With A Goal To Dramatically Improve Detector Properties. This Is Based On Existing High Performance Gasb-Based Type-Ii Sls Detector Growth Technology, With Novel Design, Development Of Mbe Growth To Implement The Design, And Fabrication And Characterization Of Devices From The Epi Grown Material. The Objective Is To Dramatically Improve Quantum Efficiency In The Detector Structure. The Phaqse Ii Effort Will Focus On Fpa Demonstration.
- 16 Jul 2018
- Igf::Ot::Igf This Phase Ii Sbir Proposes To Further Develop High Performance (Low Dark Current, High Quantum Efficiency, And Low Nedt) Infrared Epitaxy Materials Based On Type Ii Strained Layer Superlattice (Sls) For Large Format Space-Based Sensor Applications. The Epi Materials Will Be Grown With Sb-Capable Multi-Wafer Production Molecular Beam Epitaxy (Mbe) Reactor At Intelliepi Ir. The Initial Goal Includes Achieving Qe Of At Least 40% With Lwir Spectral Wavelength Band Near 12 Um. The Sls Detector Design Will Be Developed In Consultation With The Infrared Detector Group At Jpl To Ensure That This Effort Addresses Nasa Needs. In The Superlattice Engineered Structure, Many Detector Properties Are Determined Once Epitaxial Growth Is Completed. The Technical Approach Will Be To Develop Improved Epitaxial Stack Design With A Goal To Dramatically Improve Detector Properties. This Is Based On Existing High Performance Gasb-Based Type-Ii Sls Detector Growth Technology, With Novel Design, Development Of Mbe Growth To Implement The Design, And Fabrication And Characterization Of Devices From The Epi Grown Material. The Objective Is To Dramatically Improve Quantum Efficiency In The Detector Structure. The Phaqse Ii Effort Will Focus On Fpa Demonstration.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $900,000.00
- National Aeronautics And Space Administration (Nasa)
- NNX16CP08C
- This Phase Ii Sbir Proposes To Further Develop High Performance (Low Dark Current, High Quantum Efficiency, And Low Nedt) Infrared Epitaxy Materials Based On Type Ii Strained Layer Superlattice (Sls) For Large Format Space-Based Sensor Applications. The Epi Materials Will Be Grown With Sb-Capable Multi-Wafer Production Molecular Beam Epitaxy (Mbe) Reactor At Intelliepi Ir. The Initial Goal Includes Achieving Qe Of At Least 40% With Lwir Spectral Wavelength Band Near 12 Um. The Sls Detector Design Will Be Developed In Consultation With The Infrared Detector Group At Jpl To Ensure That This Effort Addresses Nasa Needs. In The Superlattice Engineered Structure, Many Detector Properties Are Determined Once Epitaxial Growth Is Completed. The Technical Approach Will Be To Develop Improved Epitaxial Stack Design With A Goal To Dramatically Improve Detector Properties. This Is Based On Existing High Performance Gasb-Based Type-Ii Sls Detector Growth Technology, With Novel Design, Development Of Mbe Growth To Implement The Design, And Fabrication And Characterization Of Devices From The Epi Grown Material. The Objective Is To Dramatically Improve Quantum Efficiency In The Detector Structure. The Phaqse Ii Effort Will Focus On Fpa Demonstration.
- 16 Oct 2019
- This Phase Ii Sbir Proposes To Further Develop High Performance (Low Dark Current, High Quantum Efficiency, And Low Nedt) Infrared Epitaxy Materials Based On Type Ii Strained Layer Superlattice (Sls) For Large Format Space-Based Sensor Applications. The Epi Materials Will Be Grown With Sb-Capable Multi-Wafer Production Molecular Beam Epitaxy (Mbe) Reactor At Intelliepi Ir. The Initial Goal Includes Achieving Qe Of At Least 40% With Lwir Spectral Wavelength Band Near 12 Um. The Sls Detector Design Will Be Developed In Consultation With The Infrared Detector Group At Jpl To Ensure That This Effort Addresses Nasa Needs. In The Superlattice Engineered Structure, Many Detector Properties Are Determined Once Epitaxial Growth Is Completed. The Technical Approach Will Be To Develop Improved Epitaxial Stack Design With A Goal To Dramatically Improve Detector Properties. This Is Based On Existing High Performance Gasb-Based Type-Ii Sls Detector Growth Technology, With Novel Design, Development Of Mbe Growth To Implement The Design, And Fabrication And Characterization Of Devices From The Epi Grown Material. The Objective Is To Dramatically Improve Quantum Efficiency In The Detector Structure. The Phaqse Ii Effort Will Focus On Fpa Demonstration.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $900,000.00
- National Aeronautics And Space Administration (Nasa)