Coolcad Electronics, Inc.
CAGE Code: 4LM52
NCAGE Code: 4LM52
Status: Active
Type: Commercial Supplier
Dun & Bradstreet (DUNS): 784794930
Summary
Coolcad Electronics, Inc. is an Active Commercial Supplier with the Cage Code 4LM52 and is tracked by Dun & Bradstreet under DUNS Number 784794930..
Address
7101 Poplar Ave
Takoma Park MD 20912-4671
United States
Points of Contact
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Frequently Asked Questions (FAQ) for CAGE 4LM52
- What is CAGE Code 4LM52?
- 4LM52 is the unique identifier used by NATO Organizations to reference the physical entity known as Coolcad Electronics, Inc. located at 7101 Poplar Ave, Takoma Park MD 20912-4671, United States.
- Who is CAGE Code 4LM52?
- 4LM52 refers to Coolcad Electronics, Inc. located at 7101 Poplar Ave, Takoma Park MD 20912-4671, United States.
- Where is CAGE Code 4LM52 Located?
- CAGE Code 4LM52 is located in Takoma Park, MD, USA.
Contracting History for CAGE 4LM52 Most Recent 25 Records
- W5170123C0191
- Sbir Phase Ii Topic A214-030, Wide Bandgap-Based Power Electronics.
- 2 Aug 2023
- Sbir Phase Ii Topic A214-030, Wide Bandgap-Based Power Electronics.
- W27p Usa Acq Spt Ctr
- Department Of Defense (Dod)
- $1,699,998.93
- Department Of Defense (Dod)
- 80NSSC23CA084
- Integrated Sic Photodiode Arrays For Uv-Spectroscopic Applications
- 21 Jun 2023
- Integrated Sic Photodiode Arrays For Uv-Spectroscopic Applications
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $899,998.00
- National Aeronautics And Space Administration (Nasa)
- W5170122C0002
- Small Business Innovation Research Phase I
- 10 Jun 2022
- Small Business Innovation Research Phase I
- W27p Usa Acq Spt Ctr
- Department Of Defense (Dod)
- $259,607.54
- Department Of Defense (Dod)
- W5170122C0002
- Small Business Innovation Research (Sbir) Phase I, Topic A214-030: Wide Bandgap Bi-Directional Converter
- 27 May 2022
- Small Business Innovation Research (Sbir) Phase I, Topic A214-030: Wide Bandgap Bi-Directional Converter
- W27p Usa Acq Spt Ctr
- Department Of Defense (Dod)
- $259,607.54
- Department Of Defense (Dod)
- 80NSSC22CA102
- E014042 Sbir Phase Ii High Temperature Modular Integrated Sic Power Converter Platform
- 2 May 2022
- E014042 Sbir Phase Ii High Temperature Modular Integrated Sic Power Converter Platform
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $799,997.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC22CA104
- E014042 Sbir Phase Ii Dual Output Bidirectional Dc-Dc Isolated Sic-Based Power Converter
- 15 Apr 2022
- E014042 Sbir Phase Ii Dual Output Bidirectional Dc-Dc Isolated Sic-Based Power Converter
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $799,997.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC22CA104
- E014042 Sbir Phase Ii Dual Output Bidirectional Dc-Dc Isolated Sic-Based Power Converter
- 22 Dec 2023
- E014042 Sbir Phase Ii Dual Output Bidirectional Dc-Dc Isolated Sic-Based Power Converter
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $799,997.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC21C0528
- E014042 Radiation Tolerant High Voltage Silicon Carbide Switches.
- 4 May 2023
- E014042 Radiation Tolerant High Voltage Silicon Carbide Switches.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $749,998.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC21C0528
- Radiation Tolerant High Voltage Silicon Carbide Switches.
- 17 Aug 2021
- Radiation Tolerant High Voltage Silicon Carbide Switches.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $749,998.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0186
- Integrated On-Chip Power For Harsh Environments
- 13 Apr 2020
- Integrated On-Chip Power For Harsh Environments
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $750,000.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0186
- Eo14042 Integrated On-Chip Power For Harsh Environments
- 14 Oct 2021
- Eo14042 Integrated On-Chip Power For Harsh Environments
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $949,960.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0186
- Eo14042 Integrated On-Chip Power For Harsh Environments
- 21 Apr 2022
- Eo14042 Integrated On-Chip Power For Harsh Environments
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $949,960.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0186
- Integrated On-Chip Power For Harsh Environments
- 28 Apr 2021
- Integrated On-Chip Power For Harsh Environments
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $949,960.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0186
- Integrated On-Chip Power For Harsh Environments
- 7 Jan 2021
- Integrated On-Chip Power For Harsh Environments
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $750,000.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0186
- Integrated On-Chip Power For Harsh Environments
- 18 Sep 2019
- Integrated On-Chip Power For Harsh Environments
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $750,000.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0186
- Integrated On-Chip Power For Harsh Environments
- 18 Aug 2021
- Integrated On-Chip Power For Harsh Environments
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $949,960.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC19C0186
- Integrated On-Chip Power For Harsh Environments
- 14 Aug 2019
- Integrated On-Chip Power For Harsh Environments
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $750,000.00
- National Aeronautics And Space Administration (Nasa)
- W31P4Q21C0008
- Nce On Slin 0001Aa Only - Darpa Sbir Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High- Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- 24 Feb 2022
- Nce On Slin 0001Aa Only - Darpa Sbir Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High- Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- W6qk Acc-Rsa
- Department Of Defense (Dod)
- $999,992.00
- Department Of Defense (Dod)
- W31P4Q21C0008
- Defense Advanced Research Projects Agency (Darpa) Small Business Innovation Research (Sbir) Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- 9 Jun 2022
- Defense Advanced Research Projects Agency (Darpa) Small Business Innovation Research (Sbir) Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- W6qk Acc-Rsa
- Department Of Defense (Dod)
- $1,499,989.00
- Department Of Defense (Dod)
- W31P4Q21C0008
- This Modification P00006 Is For A No Cost Extension To Contract W31p4q-21-C-0008.
- 14 Jun 2023
- This Modification P00006 Is For A No Cost Extension To Contract W31p4q-21-C-0008.
- W6qk Acc-Rsa
- Department Of Defense (Dod)
- $1,499,989.00
- Department Of Defense (Dod)
- W31P4Q21C0008
- Defense Advanced Research Projects Agency (Darpa) Small Business Innovation Research (Sbir) Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- 1 Feb 2021
- Defense Advanced Research Projects Agency (Darpa) Small Business Innovation Research (Sbir) Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- W6qk Acc-Rsa
- Department Of Defense (Dod)
- $500,000.00
- Department Of Defense (Dod)
- W31P4Q21C0008
- Defense Advanced Research Projects Agency (Darpa) Small Business Innovation Research (Sbir) Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- 1 Sep 2022
- Defense Advanced Research Projects Agency (Darpa) Small Business Innovation Research (Sbir) Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- W6qk Acc-Rsa
- Department Of Defense (Dod)
- $1,499,989.00
- Department Of Defense (Dod)
- W31P4Q21C0008
- 2Nd Incremental Funding - Darpa Sbir Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- 16 Dec 2021
- 2Nd Incremental Funding - Darpa Sbir Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- W6qk Acc-Rsa
- Department Of Defense (Dod)
- $999,992.00
- Department Of Defense (Dod)
- W31P4Q21C0008
- Defense Advanced Research Projects Agency (Darpa) Small Business Innovation Research (Sbir) Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- 24 Feb 2023
- Defense Advanced Research Projects Agency (Darpa) Small Business Innovation Research (Sbir) Phase Ii Effort For Statement Of Work Entitled, "Sic Cmos Integrated-Circuit High-Temperature Sensing Platform With Enhanced Gate Oxide Reliability"
- W6qk Acc-Rsa
- Department Of Defense (Dod)
- $1,499,989.00
- Department Of Defense (Dod)
- NNX17CG15C
- Coolcad Electronics Has Developed A Patent-Pending Technology To Design And Fabricate Silicon Carbide (Sic) Mosfet Opto-Electronic Integrated Circuits (Ics). We Both Fully Design And Fabricate These Sic Opto-Electronic Ics In The U.S. Using Our Own Design Methodologies, Sic Process Recipes And In-House Fabrication Facility. We Will Design, Fabricate And Test Sic Extreme, Vacuum And Deep Ultraviolet Photodetectors. We Will Prototype Pn Junction And Schottky Barrier Linear Photodiodes, As Well As Low Dark Count Avalanche Photodiodes. We Will Design And Fabricate A Two-Dimensional 256 By 256 Passive Uv Sic Focal Plane Array. Array Elements Will Be Fabricated In-House, Out Of Both Pn Junction And Schottky Barrier Detectors, Using Coolcad's Process And Facilities. We Will Design And Fabricate Opto-Electronic Integrated Circuits, Where We Will Integrate Various Types Of Detectors With A Mos Operational Amplifier Into A Single Ic To Actively Convert The Photo Current To Usable Voltage Levels. We Will Also Design And Fabricate An Integrated Photodetector And 3-Transistor Pixel For Active Readout. Multiple Active Pixel Readout 3-T Circuits Will Be An Array To Form A Sic Active Pixel Mos Deep Uv Imager. Our In-House Fabrication Process Will Also Be Upgraded. We Will Automate Optical Alignment To Improve Our Microfabrication Resolution And Reduce Minimum Feature Size. We Will Perform Gate Oxide Anneals To Improve Carrier Mobility. Improving Mobility And Reducing The Minimum Feature Size Will Increase Mosfet Performance And Increase Speed Of Opto-Integrated Circuits. Furthermore, Sic Allows For Optoelectronic Operation At High Temperatures. We Will Test Our Circuits Up To 500C And Utilize Special Metal Contact Stacks To Enhance High Temperature Reliability. Finally, We Will Make Our In-House Process Available To Nasa And Provide A Process Development Kit For Use Of Our Fabrication Facility To Prototype New Application Specific Sic Integrated Circuits.
- 9 Dec 2019
- Coolcad Electronics Has Developed A Patent-Pending Technology To Design And Fabricate Silicon Carbide (Sic) Mosfet Opto-Electronic Integrated Circuits (Ics). We Both Fully Design And Fabricate These Sic Opto-Electronic Ics In The U.S. Using Our Own Design Methodologies, Sic Process Recipes And In-House Fabrication Facility. We Will Design, Fabricate And Test Sic Extreme, Vacuum And Deep Ultraviolet Photodetectors. We Will Prototype Pn Junction And Schottky Barrier Linear Photodiodes, As Well As Low Dark Count Avalanche Photodiodes. We Will Design And Fabricate A Two-Dimensional 256 By 256 Passive Uv Sic Focal Plane Array. Array Elements Will Be Fabricated In-House, Out Of Both Pn Junction And Schottky Barrier Detectors, Using Coolcad's Process And Facilities. We Will Design And Fabricate Opto-Electronic Integrated Circuits, Where We Will Integrate Various Types Of Detectors With A Mos Operational Amplifier Into A Single Ic To Actively Convert The Photo Current To Usable Voltage Levels. We Will Also Design And Fabricate An Integrated Photodetector And 3-Transistor Pixel For Active Readout. Multiple Active Pixel Readout 3-T Circuits Will Be An Array To Form A Sic Active Pixel Mos Deep Uv Imager. Our In-House Fabrication Process Will Also Be Upgraded. We Will Automate Optical Alignment To Improve Our Microfabrication Resolution And Reduce Minimum Feature Size. We Will Perform Gate Oxide Anneals To Improve Carrier Mobility. Improving Mobility And Reducing The Minimum Feature Size Will Increase Mosfet Performance And Increase Speed Of Opto-Integrated Circuits. Furthermore, Sic Allows For Optoelectronic Operation At High Temperatures. We Will Test Our Circuits Up To 500C And Utilize Special Metal Contact Stacks To Enhance High Temperature Reliability. Finally, We Will Make Our In-House Process Available To Nasa And Provide A Process Development Kit For Use Of Our Fabrication Facility To Prototype New Application Specific Sic Integrated Circuits.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $1,125,000.00
- National Aeronautics And Space Administration (Nasa)