Kyma Technologies Inc
CAGE Code: 1E4G3
NCAGE Code: 1E4G3
Status: Active
Type: Manufacturer
Dun & Bradstreet (DUNS): 020080607
Summary
Kyma Technologies Inc is an Active Manufacturer with the Cage Code 1E4G3 and is tracked by Dun & Bradstreet under DUNS Number 020080607..
Address
8829 Midway West Rd
Raleigh NC 27617-4606
United States
Points of Contact
Related Information
People who viewed this 'CAGE Code' also viewed...
Bcg Nc, Inc. Cranbury Communications Inc Tri-Tech Computer Services Inc Henley Paper Co Spatco Environmental Inc Alligood And Associates Inc National Instrument Supply Co North Carolina Medical Society Environmental Products And Systems Wilson Parts And Equipment Co Div Of Iep Group Inc Visual Sciences Inc State Of North Carolina State Board Personali-Tees -N- More, Llc Land Environmental Catching Hope Consulting Firm Llc S&Me, Inc Snyder Tamela Top Tier Solution Llc Sprint Cellular
Frequently Asked Questions (FAQ) for CAGE 1E4G3
- What is CAGE Code 1E4G3?
- 1E4G3 is the unique identifier used by NATO Organizations to reference the physical entity known as Kyma Technologies Inc located at 8829 Midway West Rd, Raleigh NC 27617-4606, United States.
- Who is CAGE Code 1E4G3?
- 1E4G3 refers to Kyma Technologies Inc located at 8829 Midway West Rd, Raleigh NC 27617-4606, United States.
- Where is CAGE Code 1E4G3 Located?
- CAGE Code 1E4G3 is located in Raleigh, NC, USA.
Contracting History for CAGE 1E4G3 Most Recent 25 Records
- HQ086024C7108
- Sbir/Sttr Phase Ii R&D - Low-Cost Manufacturing Of High Quality Gan Substrates
- 6 Oct 2023
- Sbir/Sttr Phase Ii R&D - Low-Cost Manufacturing Of High Quality Gan Substrates
- Missile Defense Agency (Mda)
- Department Of Defense (Dod)
- $1,488,640.00
- Department Of Defense (Dod)
- FA239423CB050
- Sbir Ii "Hvpe-Based Gallium Oxide Epiwafer Development"
- 19 Sep 2023
- Sbir Ii "Hvpe-Based Gallium Oxide Epiwafer Development"
- Fa2394 Usaf Afmc Afrl Pzl Afrl Rxkm
- Department Of Defense (Dod)
- $1,250,000.00
- Department Of Defense (Dod)
- FA865022C2317
- High Responsibity Optical Gan Switch
- 5 Jul 2022
- High Responsibity Optical Gan Switch
- Fa8650 Usaf Afmc Afrl Pzl Afrl/Pzl
- Department Of Defense (Dod)
- $749,997.00
- Department Of Defense (Dod)
- 80NSSC22CA133
- E014042 Sbir Phase Ii Rad-Hard Ga2o3 Diodes
- 2 May 2022
- E014042 Sbir Phase Ii Rad-Hard Ga2o3 Diodes
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $797,890.00
- National Aeronautics And Space Administration (Nasa)
- FA864921P1451
- Integrated Optical Cascode Configuration For Vertical Gan Power Transitors.
- 6 Aug 2021
- Integrated Optical Cascode Configuration For Vertical Gan Power Transitors.
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $749,996.00
- Department Of Defense (Dod)
- FA864921P1451
- Integrated Optical Cascode Configuration For Vertical Gan Power Transitors.
- 30 May 2023
- Integrated Optical Cascode Configuration For Vertical Gan Power Transitors.
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $749,996.00
- Department Of Defense (Dod)
- FA864921P1451
- The Purpose Of This Modification Is To Extend The Delivery Date By 9 Months For Clin 0006 And 0007.
- 10 Aug 2022
- The Purpose Of This Modification Is To Extend The Delivery Date By 9 Months For Clin 0006 And 0007.
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $749,996.00
- Department Of Defense (Dod)
- FA864921P0792
- Pulsed Sputter Deposition For Efficient Doping In Gallium Nitride
- 2 Feb 2022
- Pulsed Sputter Deposition For Efficient Doping In Gallium Nitride
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $750,000.00
- Department Of Defense (Dod)
- FA864921P0792
- Sbir Phase Ii Traditional Contract F2-14000
- 29 Nov 2022
- Sbir Phase Ii Traditional Contract F2-14000
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $750,000.00
- Department Of Defense (Dod)
- FA864920P0551
- High Quality Gallium Nitride (Gan) Epitaxial Material For Power Electronics Applications
- 5 Mar 2020
- High Quality Gallium Nitride (Gan) Epitaxial Material For Power Electronics Applications
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $50,000.00
- Department Of Defense (Dod)
- N6833520C0026
- Research And Development
- 20 Oct 2022
- Research And Development
- Navair Warfare Ctr Aircraft Div
- Department Of Defense (Dod)
- $974,861.00
- Department Of Defense (Dod)
- N6833520C0026
- Research And Development
- 2 Dec 2021
- Research And Development
- Navair Warfare Ctr Aircraft Div
- Department Of Defense (Dod)
- $732,316.00
- Department Of Defense (Dod)
- 80NSSC21C0236
- Rad-Hard Ga2o3 Diodes
- 9 Sep 2021
- Rad-Hard Ga2o3 Diodes
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $124,993.00
- National Aeronautics And Space Administration (Nasa)
- W911QX18C0005
- Sbir Phase Ii Topic A16-021
- 10 May 2018
- Sbir Phase Ii Topic A16-021
- W6qk Acc-Apg Adelphi
- Department Of Defense (Dod)
- $999,893.45
- Department Of Defense (Dod)
- 80NSSC22PB064
- Eo14042 Sbir Phase I Radiation-Tolerant Vertical Gan Diodes
- 18 Aug 2022
- Eo14042 Sbir Phase I Radiation-Tolerant Vertical Gan Diodes
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $160,000.00
- National Aeronautics And Space Administration (Nasa)
- FA864920P0329
- High Responsivitylateral Gan Switch F192-051-1431
- 12 Dec 2019
- High Responsivitylateral Gan Switch F192-051-1431
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $150,000.00
- Department Of Defense (Dod)
- W911QX16C0026
- Igf::Ot::Igf Sbir 1 Exercise Of Option
- 16 Aug 2017
- Igf::Ot::Igf Sbir 1 Exercise Of Option
- W6qk Acc-Apg Adelphi
- Department Of Defense (Dod)
- $149,988.97
- Department Of Defense (Dod)
- 80NSSC22PB064
- Eo14042 Sbir Phase I Radiation-Tolerant Vertical Gan Diodes
- 21 Jul 2022
- Eo14042 Sbir Phase I Radiation-Tolerant Vertical Gan Diodes
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $160,000.00
- National Aeronautics And Space Administration (Nasa)
- HQ086022C7820
- Sbir/Sttr Phase I Research & Development Low-Cost Manufacturing Of High Quality Gan Substrates
- 20 Jul 2022
- Sbir/Sttr Phase I Research & Development Low-Cost Manufacturing Of High Quality Gan Substrates
- Missile Defense Agency (Mda)
- Department Of Defense (Dod)
- $149,999.00
- Department Of Defense (Dod)
- FA865018C5040
- Sbir Ii High Quality Algan Substrates For Optical/Electronic
- 8 Jun 2018
- Sbir Ii High Quality Algan Substrates For Optical/Electronic
- Fa8650 Usaf Afmc Afrl Pzl Afrl/Pzl
- Department Of Defense (Dod)
- $750,000.00
- Department Of Defense (Dod)