Structured Materials Industries,
Inc.
Dba Structured Materials
CAGE Code: 0U100
NCAGE Code: 0U100
Status: Active
Type: Manufacturer
Dun & Bradstreet (DUNS): 787144807
Summary
Structured Materials Industries,, Inc., Dba Structured Materials is an Active Manufacturer with the Cage Code 0U100 and is tracked by Dun & Bradstreet under DUNS Number 787144807..
Address
201 Circle Dr N
Piscataway NJ 08854-3723
United States
Points of Contact
No Points of Contact...
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Frequently Asked Questions (FAQ) for CAGE 0U100
- What is CAGE Code 0U100?
- 0U100 is the unique identifier used by NATO Organizations to reference the physical entity known as Structured Materials Industries, Inc. Dba Structured Materials located at 201 Circle Dr N, Piscataway NJ 08854-3723, United States.
- Who is CAGE Code 0U100?
- 0U100 refers to Structured Materials Industries, Inc. Dba Structured Materials located at 201 Circle Dr N, Piscataway NJ 08854-3723, United States.
- Where is CAGE Code 0U100 Located?
- CAGE Code 0U100 is located in Piscataway, NJ, USA.
Contracting History for CAGE 0U100 Most Recent 25 Records
- 80NSSC23PB596
- Sbir Phase I Optimal Radiation Tolerant High Intensity High Temperature Photovoltaics
- 28 Jul 2023
- Sbir Phase I Optimal Radiation Tolerant High Intensity High Temperature Photovoltaics
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $149,937.00
- National Aeronautics And Space Administration (Nasa)
- 80NSSC23PB596
- Sbir Phase I Optimal Radiation Tolerant High Intensity High Temperature Photovoltaics
- 15 Aug 2023
- Sbir Phase I Optimal Radiation Tolerant High Intensity High Temperature Photovoltaics
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $159,937.00
- National Aeronautics And Space Administration (Nasa)
- FA865022C2321
- Low Temperature Homogeneous Epitaxy Of 4H-Sic Using Novel P
- 25 Jul 2022
- Low Temperature Homogeneous Epitaxy Of 4H-Sic Using Novel P
- Fa8650 Usaf Afmc Afrl Pzl Afrl/Pzl
- Department Of Defense (Dod)
- $749,927.00
- Department Of Defense (Dod)
- HQ086023C7131
- Sbir/Sttr Phase Ii R&D
- 5 Jun 2023
- Sbir/Sttr Phase Ii R&D
- Missile Defense Agency (Mda)
- Department Of Defense (Dod)
- $1,466,228.00
- Department Of Defense (Dod)
- FA864921C0004
- Ncte On Milestones 7,8, And 10
- 2 Jun 2022
- Ncte On Milestones 7,8, And 10
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $750,000.00
- Department Of Defense (Dod)
- FA864921C0004
- Metasurface Photonics
- 12 May 2023
- Metasurface Photonics
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $750,000.00
- Department Of Defense (Dod)
- FA864921C0004
- Metasurface Photonics
- 7 Dec 2020
- Metasurface Photonics
- Fa8649 Usaf Sbir Sttr Contracting
- Department Of Defense (Dod)
- $750,000.00
- Department Of Defense (Dod)
- N6893620C0027
- Sbir Phase 2, Topic N182-105, Incremental Funding Mod
- 15 Jul 2021
- Sbir Phase 2, Topic N182-105, Incremental Funding Mod
- Naval Air Warfare Center
- Department Of Defense (Dod)
- $803,875.46
- Department Of Defense (Dod)
- N6893620C0027
- P00002 Cdr Correction For Missing Payment Clause
- 9 Aug 2021
- P00002 Cdr Correction For Missing Payment Clause
- Naval Air Warfare Center
- Department Of Defense (Dod)
- $803,875.46
- Department Of Defense (Dod)
- N6893620C0027
- Sbir N182-105-0501 Phase 2
- 5 Feb 2020
- Sbir N182-105-0501 Phase 2
- Naval Air Warfare Center
- Department Of Defense (Dod)
- $498,785.00
- Department Of Defense (Dod)
- N6893620C0027
- Pop Extension
- 17 Nov 2022
- Pop Extension
- Naval Air Warfare Center
- Department Of Defense (Dod)
- $803,875.46
- Department Of Defense (Dod)
- N6893619C0007
- Igf::Ot::Igf; Sbir Phase 1 Award To Structured Materials Industries
- 17 Oct 2018
- Igf::Ot::Igf; Sbir Phase 1 Award To Structured Materials Industries
- Naval Air Warfare Center
- Department Of Defense (Dod)
- $224,999.99
- Department Of Defense (Dod)
- N0003018C0214
- Base; Sbir Phase I Topic N173-146; Igf::Ct::Igf
- 26 Apr 2018
- Base; Sbir Phase I Topic N173-146; Igf::Ct::Igf
- Strategic Systems Programs
- Department Of Defense (Dod)
- $124,999.99
- Department Of Defense (Dod)
- HQ086022C7510
- Sbir/Sttr Phase I Research & Development Pbsnte Based Long-Wave Infrared (Lwir) Focal Plane Arrays (Fpas)
- 4 Aug 2022
- Sbir/Sttr Phase I Research & Development Pbsnte Based Long-Wave Infrared (Lwir) Focal Plane Arrays (Fpas)
- Missile Defense Agency (Mda)
- Department Of Defense (Dod)
- $149,998.00
- Department Of Defense (Dod)
- N0003018C0214
- Sbir Phase I Topic N173-146
- 7 Feb 2020
- Sbir Phase I Topic N173-146
- Strategic Systems Programs
- Department Of Defense (Dod)
- $124,999.99
- Department Of Defense (Dod)
- HQ086022C7510
- Sbir/Sttr Phase I Research & Development Pbsnte Based Long-Wave Infrared (Lwir) Focal Plane Arrays (Fpas)
- 24 Nov 2021
- Sbir/Sttr Phase I Research & Development Pbsnte Based Long-Wave Infrared (Lwir) Focal Plane Arrays (Fpas)
- Missile Defense Agency (Mda)
- Department Of Defense (Dod)
- $149,998.00
- Department Of Defense (Dod)
- HQ086022C7042
- Sbir/Sttr Phase I Research & Development Innovative Equipment Large Single-Crystal Cdznte Production For Long-Wave Infrared Detector Arrays
- 29 Nov 2021
- Sbir/Sttr Phase I Research & Development Innovative Equipment Large Single-Crystal Cdznte Production For Long-Wave Infrared Detector Arrays
- Missile Defense Agency (Mda)
- Department Of Defense (Dod)
- $149,999.63
- Department Of Defense (Dod)
- 80NSSC18P2145
- In This Sttr Phase I Program, Structured Materials Industries, Inc. (Smi) And Arizona State University (Asu) Will Develop A Sigesn Based Light Emitter Device Technology On Si, Which Will Be A Key Ingredient For Si-Based Integrated Photonics Applications, Such As In Lab-On-Achip Integrated Chemical And Biological Spectrometers For Landers, Astronaut Health Monitoring, Front-End And Back-End For Remote Sensing Instruments Including Trace Gas Lidars In Nasa Missions. Sigesn Presents A Great Potential For The Si-Based Photonic Spectrometers Since It Offers A Direct Band Gap Over A Range Of Compositions As Well As Direct Growth Compatibility With Si. The Narrow Direct Band Gap Offers The Promise Of Iii-V Like Photonic Device Performance In The ~1.5 To 5.0 Micron Range. The Proposed On-Chip Biological And Chemical Spectrometer On Silicon Has The Distinctive Advantages Of Small Foot Print, Potentially Fully Integrated On The Same Silicon Platform To Form The Si Phonic Circuits, Including Sigesn Led Light Source And Detector, As Well As Light Dispersion Function, That Will Be Made Of A Photonic Crystal, Rather Than A Diffraction Grating As A Means Of Wavelength Separation. The Full Integration Of Sigesn Emitters With Photonic Devices, All On Si, Will Constitute The Long Awaited Dawn Of The Next Generation In Semiconductor Electronics-Photonics And Spectrometers On One Common Platform.
- 11 Sep 2018
- In This Sttr Phase I Program, Structured Materials Industries, Inc. (Smi) And Arizona State University (Asu) Will Develop A Sigesn Based Light Emitter Device Technology On Si, Which Will Be A Key Ingredient For Si-Based Integrated Photonics Applications, Such As In Lab-On-Achip Integrated Chemical And Biological Spectrometers For Landers, Astronaut Health Monitoring, Front-End And Back-End For Remote Sensing Instruments Including Trace Gas Lidars In Nasa Missions. Sigesn Presents A Great Potential For The Si-Based Photonic Spectrometers Since It Offers A Direct Band Gap Over A Range Of Compositions As Well As Direct Growth Compatibility With Si. The Narrow Direct Band Gap Offers The Promise Of Iii-V Like Photonic Device Performance In The ~1.5 To 5.0 Micron Range. The Proposed On-Chip Biological And Chemical Spectrometer On Silicon Has The Distinctive Advantages Of Small Foot Print, Potentially Fully Integrated On The Same Silicon Platform To Form The Si Phonic Circuits, Including Sigesn Led Light Source And Detector, As Well As Light Dispersion Function, That Will Be Made Of A Photonic Crystal, Rather Than A Diffraction Grating As A Means Of Wavelength Separation. The Full Integration Of Sigesn Emitters With Photonic Devices, All On Si, Will Constitute The Long Awaited Dawn Of The Next Generation In Semiconductor Electronics-Photonics And Spectrometers On One Common Platform.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $124,999.00
- National Aeronautics And Space Administration (Nasa)
- NNX15CG10C
- Igf::Ot::Igf In This Sbir Program, Structured Materials Industries, Inc. (Smi) And Partners Are Developing Ultraviolet (Uv) Photo Detection Devices With High Sensitivity, Low Noise And Fast Response Time. The Technical Approach Is Based On Nanowires Of The Wide Band Gap Semiconductor Znmgo. The Resulting Devices Will Be Blind To Solar Radiation, And Have A Tunable Cut-Off Frequency Which Can Be Adjusted By The Mg Content. The Resulting Photo Detection Devices Will Also Be Low-Cost, And Compatible With A Wide Range Of Device Materials, Including Silicon Substrates And Silicon Integrated Circuitry. During Phase I, The Sbir Team Demonstrated Technical Feasibility Of A Simple Process For Fabricating The Photo Detectors From Vertically Aligned Arrays Of Nanowires. These Phase I Achievements Enable Low Cost Production Of Nanowire Based Photo Detection Devices, Using Standard Microelectronic Techniques. The Phase I Results Will Ultimately Enable High Volume Production Of Nanowire Devices, On Large Area Substrates, And Enable Integration With Other Microelectronic Circuitry.
- 31 May 2018
- Igf::Ot::Igf In This Sbir Program, Structured Materials Industries, Inc. (Smi) And Partners Are Developing Ultraviolet (Uv) Photo Detection Devices With High Sensitivity, Low Noise And Fast Response Time. The Technical Approach Is Based On Nanowires Of The Wide Band Gap Semiconductor Znmgo. The Resulting Devices Will Be Blind To Solar Radiation, And Have A Tunable Cut-Off Frequency Which Can Be Adjusted By The Mg Content. The Resulting Photo Detection Devices Will Also Be Low-Cost, And Compatible With A Wide Range Of Device Materials, Including Silicon Substrates And Silicon Integrated Circuitry. During Phase I, The Sbir Team Demonstrated Technical Feasibility Of A Simple Process For Fabricating The Photo Detectors From Vertically Aligned Arrays Of Nanowires. These Phase I Achievements Enable Low Cost Production Of Nanowire Based Photo Detection Devices, Using Standard Microelectronic Techniques. The Phase I Results Will Ultimately Enable High Volume Production Of Nanowire Devices, On Large Area Substrates, And Enable Integration With Other Microelectronic Circuitry.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $750,000.00
- National Aeronautics And Space Administration (Nasa)
- N6833518C0743
- Research And Development Igf::Ot::Igf
- 28 Aug 2018
- Research And Development Igf::Ot::Igf
- Navair Warfare Ctr Aircraft Div Lke
- Department Of Defense (Dod)
- $125,000.00
- Department Of Defense (Dod)
- N6893619C0007
- Exercising The Option Period
- 19 Jul 2019
- Exercising The Option Period
- Naval Air Warfare Center
- Department Of Defense (Dod)
- $224,999.99
- Department Of Defense (Dod)
- N6893619C0007
- Igf::Ot::Igf; Clause Addition
- 7 Jan 2019
- Igf::Ot::Igf; Clause Addition
- Naval Air Warfare Center
- Department Of Defense (Dod)
- $125,000.00
- Department Of Defense (Dod)
- N0017323P1600
- Engineering Service Visit
- 13 Dec 2022
- Engineering Service Visit
- Naval Research Laboratory
- Department Of Defense (Dod)
- $6,402.14
- Department Of Defense (Dod)
- FA955018P0013
- Sttr Phase I - Mid-Ir Meta Lenses
- 12 Feb 2019
- Sttr Phase I - Mid-Ir Meta Lenses
- Fa9550 Afrl Afosr
- Department Of Defense (Dod)
- $150,000.00
- Department Of Defense (Dod)
- 80NSSC18P2145
- In This Sttr Phase I Program, Structured Materials Industries, Inc. (Smi) And Arizona State University (Asu) Will Develop A Sigesn Based Light Emitter Device Technology On Si, Which Will Be A Key Ingredient For Si-Based Integrated Photonics Applications, Such As In Lab-On-Achip Integrated Chemical And Biological Spectrometers For Landers, Astronaut Health Monitoring, Front-End And Back-End For Remote Sensing Instruments Including Trace Gas Lidars In Nasa Missions. Sigesn Presents A Great Potential For The Si-Based Photonic Spectrometers Since It Offers A Direct Band Gap Over A Range Of Compositions As Well As Direct Growth Compatibility With Si. The Narrow Direct Band Gap Offers The Promise Of Iii-V Like Photonic Device Performance In The ~1.5 To 5.0 Micron Range. The Proposed On-Chip Biological And Chemical Spectrometer On Silicon Has The Distinctive Advantages Of Small Foot Print, Potentially Fully Integrated On The Same Silicon Platform To Form The Si Phonic Circuits, Including Sigesn Led Light Source And Detector, As Well As Light Dispersion Function, That Will Be Made Of A Photonic Crystal, Rather Than A Diffraction Grating As A Means Of Wavelength Separation. The Full Integration Of Sigesn Emitters With Photonic Devices, All On Si, Will Constitute The Long Awaited Dawn Of The Next Generation In Semiconductor Electronics-Photonics And Spectrometers On One Common Platform.
- 18 Jul 2018
- In This Sttr Phase I Program, Structured Materials Industries, Inc. (Smi) And Arizona State University (Asu) Will Develop A Sigesn Based Light Emitter Device Technology On Si, Which Will Be A Key Ingredient For Si-Based Integrated Photonics Applications, Such As In Lab-On-Achip Integrated Chemical And Biological Spectrometers For Landers, Astronaut Health Monitoring, Front-End And Back-End For Remote Sensing Instruments Including Trace Gas Lidars In Nasa Missions. Sigesn Presents A Great Potential For The Si-Based Photonic Spectrometers Since It Offers A Direct Band Gap Over A Range Of Compositions As Well As Direct Growth Compatibility With Si. The Narrow Direct Band Gap Offers The Promise Of Iii-V Like Photonic Device Performance In The ~1.5 To 5.0 Micron Range. The Proposed On-Chip Biological And Chemical Spectrometer On Silicon Has The Distinctive Advantages Of Small Foot Print, Potentially Fully Integrated On The Same Silicon Platform To Form The Si Phonic Circuits, Including Sigesn Led Light Source And Detector, As Well As Light Dispersion Function, That Will Be Made Of A Photonic Crystal, Rather Than A Diffraction Grating As A Means Of Wavelength Separation. The Full Integration Of Sigesn Emitters With Photonic Devices, All On Si, Will Constitute The Long Awaited Dawn Of The Next Generation In Semiconductor Electronics-Photonics And Spectrometers On One Common Platform.
- Nasa Shared Services Center
- National Aeronautics And Space Administration (Nasa)
- $124,999.00
- National Aeronautics And Space Administration (Nasa)